Characterization of Silicon Nitride and Silicon Carbonitride Layers from 1,1,3,3,5,5‐Hexamethylcyclotrisilazane Plasmas

Abstract

ation and oxidation, which will subsequently lead to different compositions of the nitrided oxide films. Based on the multilayer model a simulation program for the nitridation kinetics has been developed ( 17) and the simulated nitrogen profiles agree qualitatively with experimental results under different processing conditions.