Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique

Wang, Tahui; Chiang, L.P.; Zous, N.K.; Chang, Tian-Sheuan; Huang, Chiung‐Yi

doi:10.1109/16.704380

Cited by 15 publications

(1 citation statement)

References 22 publications

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“…However, the analysis of hot-carrier-stress induced degradation of SOI MOSFETs is a complicated problem due to the dual channels and front-back interface coupling effect. For instance, as to whether the hot-carrier-stress of the front (or back) channel results in damage of the opposite channel or not, there exists contradictory experimental information from the various measurements of the SOI MOSFET performance [5,6]. Most of the previous studies only used the channel current or transconductance as the monitor of the induced degradation in SOI MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

He¹,

Zhang²,

Huang³

et al. 2002

Semicond. Sci. Technol.

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The generation of front and back gate interface and oxide traps due to a hot-carrier-stress in silicon-on-insulator (SOI) devices has been studied experimentally. Based on a refined forward gated-diode method, the recombination-generation currents originating from the front and back gate interface traps induced by the hot-carrier-stress are measured separately and then the front and back gate interface and oxide traps are extracted independently. The experimental results show that the front channel hot-carrier-stress results not only in strong generation of front gate interface and oxide traps, but also in significant generation of back gate interface traps. All these indicate that one channel hot-carrier-stress will lead to great damage in the opposite channel in SOI MOSFETs. These results provide a clear physical picture of the degradation of SOI MOSFETs due to the hot-carrier-stress effect.

show abstract

Section: Introductionmentioning

confidence: 99%

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

He¹,

Zhang²,

Huang³

et al. 2002

Semicond. Sci. Technol.

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High electric field stress model of n-channel VDMOSFET based on artificial neural network

Aleksić

Pantić

2018

J Comput Electron

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Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs

Zhang

Huang

et al. 2002

J. of Electron.(China)

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The forward gated-diode R-G current method for extracting the hot-carrier-stressinduced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter.This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.

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Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique

Cited by 15 publications

References 22 publications

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

High electric field stress model of n-channel VDMOSFET based on artificial neural network

Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs

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