Charge release of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films

Abstract

The charge release speed and backward phase switching time of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films were investigated by directly measuring the switching current upon removal of the applied electric field. The backward switching time is about 6 ns. The maximum switching current density can reach 9400 A/cm2, and more than half of the stored charge can be released in 10 ns. These results show that the obtained antiferroelectric thin films are very promising for decoupling capacitor applications in high speed multichip modules.

Progress in synthesis of ferroelectric ceramic materials via high-energy mechanochemical technique

“…This characteristic of antiferroelectric ceramics makes them good candidates for high displacement electromehanical actuator applications [99][100][101][102][103]. In addition, the transformation of antiferroelectrics from AFE to FE phase leads to a significant energy storage, which can be used in energy storage applications [104,105]. Antiferroelectric ceramics are also studied because of their unique pyroelectric, electro-optical and many other useful properties [99].…”

Improved dielectric properties of (110)-preferred (Pb, La) (Zr, Sn, Ti)O3 antiferroelectric thin films on metalorganic decomposition-derived LaNiO3 buffer layer

“…In the last two decades, doped lead zirconate titanate stannate antiferroelectric (AFE) materials have received increasing attention due to their larger electric-induced strain and unique double hysteresis loops, which have the potential usage in microelectric system, especially for higher energy storage applications and high-strain transducers/actuators [1,2]. Generally, most studies on the lead-contained AFE thin films were usually fabricated on Pt/Ti/SiO 2 /Si substrates directly.…”

Pulse characterization of antiferroelectric PbZrTiO3 thin films

“…The corresponding forwards phase transition has been investigated by Brooks et al 2 who reported switching within typically 300 ns. More recently, antiferroelectric thin films were also studied by Xu et al 3 using PbZrTiO 3 of about 0.4 m thickness, equally doped with lanthanum at the Aand with tin at the B-site of the perovskite structure, and deposited by a modified sol-gel method on conventional silicon substrates. Field forced FE-AFE backwards transition times below 10 ns were reported for these films.…”