Charge storage in silicon-implanted silicondioxide layers examined by scanning probe microscopy

Beyer, R.; Beyreuther, Elke; Borany, J. von; Weber, Jens

doi:10.1016/j.tsf.2006.02.002

Cited by 3 publications

(1 citation statement)

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“…SCM relies on the presence of an oxide on the surface, necessary to form the Metal-Oxide-Semiconductor (MOS) stack which is at the basis of the SCM operation. In order to test the quality of this top oxide (Si02 [3] or Zr02 [4]), detect the p-n junctions [5] or find out the best experimental conditions for dopant mapping (e.g. best signal to noise ratio), Scanning Capacitance Spectroscopy (SCS) has been developed in order to record the SCM signal (AC/AV) as a function of the applied continuous voltage VDC [6].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Characterization Of Ultra-Thin Dielectrics Using Scanning Capacitance Microscopy

Ligor¹,

Gautier²,

Descamps³

et al. 2009

AIP Conference Proceedings

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Abstract. In this communication, Scanning Capacitance Spectroscopy (SCS) is used in order to characterize the electrical properties of thin dielectrics. The aim is to determine the best experimental conditions that lead to a reliable interpretation of SCS and to the best signal to noise ratio, with the objective of measuring the characteristics of the oxide (charges in the oxide, flat band voltage...). Comparisons are made with macroscopic C-V curves obtained with an impedance analyzer to test the reliability of the results obtained by SCS. In particular, we study the role of the AFM laser and tip-sample contact on the shape of the SCS (width, additional peaks...) and show that they introduce parasitic features which are not present in macroscopic C-V curves. This leads to a difficult interpretation of SCS results, especially in the case where characteristic parameters of the oxide are to be extracted from SCS analysis.

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