Charge trapping in thin nitrided SiO2 films

Severi, M.; Impronta, M.

doi:10.1063/1.98549

Cited by 28 publications

(11 citation statements)

References 18 publications

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“…The same capture cross-section has been already reported [14,26] in the case of severe nitridation. This electron trap is probably due to nitrogen itself.…”

Section: Discussionsupporting

confidence: 70%

“…Very different electron trap capture cross-sections in the range 10 -18-10 -14 cm 2 have been reported. High capture cross-sections in the range 10-I6-10-14 cm 2 have been generally attributed to nitrogen related tiraps [13,14,25,26]. Lai and Al have reported an increase of the SiOH related trap density after thermal nitridation [11,17].…”

Section: Discussionmentioning

confidence: 98%

“…These properties make nitrided oxides attractive as gate insulators for a number of applications including EEPROM's, dual CMOS technology which requires the use of p+ boron doped polysilicon gates and radiation hardened devices. Nevertheless many works [7,13,14] have shown that SiO7 nitridation in ammonia ambient introduces a large number of electron traps which results in reduced stability under low electric field stresses. These traps have been generally attributed to hydrogen and nitrogen related species incorporated during the nitridation step.…”

Section: Introductionmentioning

confidence: 99%

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Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

et al. 1992

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In this work, we report the effects of an ammonia plasma nitridation on the charge trapping properties of thin SiO 2 films in correlation with their nitrogen and hydrogen contents. Electron traps characteristics were determined by the avalanche injection technique. Hydrogen contents were measured by Elastic Recoil Detection analysis (ERDA). Nitrogen depth profiles were obtained with Auger spectroscopy. It is shown that the bulk electron trapping properties are essentially controlled by the specificity of hydrogen and nitrogen incorporation in the SiO2 films during the ammonia plasma process. For short nitridation times, an increase of hydrogen related electron trap densities is observed in good agreement with hydrogen ERDA measurements. However hydrogen concentration never exceeds 3 at% and can be scaled down by a short time post-nitridation anneal in oxygen, to a level comparable indeed inferior to that of a non-nitrided oxide. For heavy nitridation, an additional electron trap is detected which could be associated to the presence of nitrogen in the bulk of SiO 2 .

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“…The same capture cross-section has been already reported [14,26] in the case of severe nitridation. This electron trap is probably due to nitrogen itself.…”

Section: Discussionsupporting

confidence: 70%

Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

et al. 1992

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“…P-doped SiO 2 (340 nm) has been prepared through diffusion of NH 3 into a SiO 2 surface at 1100 °C for 1 min. Atomic nitrogen from the ammonia (NH 3 ) replaces oxygen atoms near the surface and leads to a positively charged NSiO + network . In addition, the ammonia molecules diffuse and aggregate below SiO 2 and form negative charges (NH 3 δ− , NH 2 – ) (Scheme ).…”

Section: Methodsmentioning

confidence: 99%

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

Wittmann

Aumer

Wittmann

et al. 2020

ACS Appl. Electron. Mater.

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Controlling the doping level in graphene during integration into silicon CMOS compatible devices is an open challenge. In general, the doping level in graphene is influenced via substrate interactions, metal contacts, and encapsulation layers. Here, we demonstrate a method to control the Fermi level in graphene through transfer onto ionic-doped oxide surfaces. The substrates were prepared to this end by diffusion of ammonia and aluminum on the oxide surface, which induces positive (NSiO+) and negative (AlSiO–) charges on the oxide layer. Van der Pauw measurements show that the charge neutrality or Dirac voltage in graphene can be shifted from about −60 V (n = −8.62 × 1012 cm–2) on standard SiO2 to about 13 V (n = 2.17 × 1012 cm–2) on negatively doped SiO2 layers by manipulating the surface charge. Hall measurements show that the electron mobility in graphene transferred on an as-grown oxide surface is higher than for graphene on a doped oxide because of additional scattering centers. Transfer line method measurements show that the contact resistance between graphene and nickel electrodes varies in average from 683.3 Ω·μm on SiO2 to 1046.6 Ω·μm on negatively doped SiO2 and that it depends on both the substrate surface charge and on graphene sheet resistance. Ionic-doped oxide surfaces are generally temperature-stable with respect to front- and back-end-of-the-line semiconductor manufacturing. The method presented here allows adjustments of the surface charge density of the substrate, and thus in graphene, which cannot be realized by organic or metallic functionalization. Therefore, the method may be suitable for engineering graphene-based devices and circuits, in particular, for applications that require complementary devices or a specific position of the Fermi level in graphene, for example, to adjust contact resistivity, sheet resistance, or sensor sensitivity.

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“…There is a 15% decrease in magnitude of the threshold voltage for the OTFT with NH3-annealed Sio2 although it has a thicker gate dielectric. The decrease in threshold voltage may be due to the fact that hydrogen species in the oxynitride film induced by the NH3 annealing increase the trapping of electrons [12], which is equivalent to a built-in negative gate voltage. Therefore, the OTFT can be turned on by using smaller gate voltage.…”

Section: Id11/2 Versus Vg Characteristicsmentioning

confidence: 99%

Enhanced Mobility for Pentacene TFT Built on NH>inf<3>/inf<- Annealed Thermally Grown SiO>inf<2>/inf<

Kwan

Cheng²,

Lai³

et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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We have enhanced the mobility of pentacene OTFTs using NH3-annealed SiO2 as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%.

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Charge trapping in thin nitrided SiO2 films

Cited by 28 publications

References 18 publications

Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

Charge Trapping Properties of Thin Plasma Nitrided Oxides Induced by Nitrogen and Hydrogen Incorporation

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

Enhanced Mobility for Pentacene TFT Built on NH>inf<3>/inf<- Annealed Thermally Grown SiO>inf<2>/inf<

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