CHARIOT: Software tool for modeling SEM signal and e-beam lithography

Babin, S.; Borisov, S. S.; Ivanchikov, A.; Ruzavin, I.

doi:10.1016/j.phpro.2008.07.110

Cited by 33 publications

(20 citation statements)

References 10 publications

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“…13 Software with 72 cores was installed in an all-in-one server computer, Proliant DL 980 G2 (Hewlett Packard), with 80 cores. Figure 1 shows schematic representations of a sample EUV mask used for the simulation.…”

Section: Methodsmentioning

confidence: 99%

Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

Iida¹,

Amano²,

Hirano³

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. According to an International Technology Roadmap for Semiconductors (ITRS-2012) update, the sensitivity requirement for an extreme ultraviolet (EUV) mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16-nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64-nm line-andspace patterned EUV mask were investigated using simulated projection electron microscope (PEM) images. The obtained defect images showed that the optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that the PEM technique has a potential to detect 16-nm size defects on an hp 64-nm patterned EUV mask. © The Authors.Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Methodsmentioning

confidence: 99%

Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

Iida¹,

Amano²,

Hirano³

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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“…Identification of residual-type defect on extreme ultraviolet mask by projection electron microscope using Monte Carlo simulation Susumu Iida, a) Tsuyoshi Amano, Ryoichi Hirano, Tsuneo Terasawa, and Hidehiro Watanabe EUVL Infrastructure Development Center, Inc., 16 Thin absorber defects called residual-type defects are etching residues that tend to become more discernible as the pattern size of the extreme ultraviolet (EUV) mask shrinks. Projection electron microscope (PEM) images of the residual-type defects with various thicknesses were investigated using Monte Carlo simulation.…”

mentioning

confidence: 99%

Identification of residual-type defect on extreme ultraviolet mask by projection electron microscope using Monte Carlo simulation

Iida¹,

Amano²,

Hirano³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Thin absorber defects called residual-type defects are etching residues that tend to become more discernible as the pattern size of the extreme ultraviolet (EUV) mask shrinks. Projection electron microscope (PEM) images of the residual-type defects with various thicknesses were investigated using Monte Carlo simulation. In the case of the secondary electron image, the thickness of the defect was identified by the defect's signal intensity. It was found that the material and its relative thickness affected the signal intensity. In the case of the mirror electron image, three kinds of defects were selectively identified by controlling the primary electron energy. When the energy distribution of the primary electrons was taken into account, these defects were identified by the defects' signal intensities. It was found that the surface potential of the residual-type defects on the EUV mask greatly affected the mirror electron image. These results suggest that the thickness of the residual-type defect is identifiable by the PEM technique, and the defect selectivity is greatly affected by the thickness of the oxide layer when mirror electrons are used.

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“…In order to evaluate the defect detection sensitivity of a PEM inspection system, simulated PEM images were obtained using a CHARIOT Monte Carlo software (Abeam Technologies Inc.). 30 The simulated PEM images take into account the characteristics of electron imaging optics, such as their aberrations, electron transmittance, and aperture stops, because these images are obtained at a conjugate image plane of the real application. 25,26 For these simulations, the illumination and imaging system used were originally designed with an inspection capability for pattern sizes as narrow as half pitch (hp) 64 nm.…”

Section: Methodsmentioning

confidence: 99%

Pattern inspection of etched multilayer extreme ultraviolet mask

Iida¹,

Hirano²,

Amano³

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Patterned mask inspection for an etched multilayer (ML) extreme ultraviolet mask was investigated. In order to optimize the mask structure from the standpoint of a pattern inspection the mask structure not only from the standpoint of a pattern inspection by using a projection electron microscope but also by using a projection electron microscope but also by considering the other fabrication processes using electron beam techniques such as critical dimension metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients of the candidate materials for the conductive layer, we evaluated the image contrast and the influence of the charging effect. In the cases of 40-pair ML, 16-nm-sized extrusion and intrusion defects were found to be detectable more than 10 sigma in half pitch 44, 40, and 32 nm line-and-space patterns. Reducing 40-pair ML to 20-pair ML degraded the image contrast and the defect detectability. However, by selecting B 4 C as a conductive layer, 16-nm-sized defects and etching residues remained detectable. The 16-nm-sized defects were also detected after the etched part was refilled with Si. A double-layer structure with 2.5-nm-thick B 4 C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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CHARIOT: Software tool for modeling SEM signal and e-beam lithography

Cited by 33 publications

References 10 publications

Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

Identification of residual-type defect on extreme ultraviolet mask by projection electron microscope using Monte Carlo simulation

Pattern inspection of etched multilayer extreme ultraviolet mask

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