Chemical Etching Characteristics of InGaAs / InP and InAlAs / InP Heterostructures

Stano, A.

doi:10.1149/1.2100477

Cited by 38 publications

(15 citation statements)

References 3 publications

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“…Extensive reviews of wet chemical etching of III-V materials, in general, and InP/InGaAsP materials, in particular, are found in [1]- [3]. Wet etching of InGaAs and InGaAsP using H 2 SO 4 : H 2 O 2 : H 2 O solutions has been previously described in [4]- [7]. These solutions are routinely used for fabricating InP-based optoelectronic devices, e.g., for patterning and etching through InGaAsP quantum wells (QWs).…”

mentioning

confidence: 99%

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Pasquariello

Bjorlin

Lasaosa

et al. 2006

J. Lightwave Technol.

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confidence: 99%

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Pasquariello

Bjorlin

Lasaosa

et al. 2006

J. Lightwave Technol.

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“…Although the plateau surface was rough, the sidewalls of all crystallographic etch profile showed a very smooth surface. The sidewall profiles made by the supersonic chlorine highly resembles other preferential etches created by wet etch based on sulfuric, phosphoric acids and hydrogen peroxide [55].…”

Section: Etch Profilementioning

confidence: 88%

III-V Compound Semiconductors

Li¹,

Mastro²,

Dadgar³

2016

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A novel ultra-high vacuum (UHV) compatible dry etch reactor was designed, constructed, and characterized. The etch mechanism is dependent solely on the chemical reactivity of a neutral etchant gas, enhanced by its kinetic energy, and does not utilize any plasma or ion source in obtaining directionality or acceleration. This thesis work is the first reported demonstration of molecular chlorine etch of InP at chlorine pressures of 1x 10-7 torr with no ion, plasma, photon, or e-beam assistance. The etchant gas was accelerated to supersonic speeds through the use of free-jet expansion nozzle coupled with a skimmer in differentially pumped vacuum chambers. By varying the nozzle temperature and the concentration of chlorine in a gas matrix, the energy of the incident beam can be varied. The directionality of the molecular beam produced was maintained by using it in an UHV environment with operating background pressures of 1 x 10-7 torr or lower. As the translationally-activated molecules contribute to collision-induced dissociative chemisorption, a chemical reaction can be initiated in an otherwise unreactive material system. Two quantitative in-situ process monitoring methods were also devised for this work: (1) a surface roughness measurement method using reflected 633 nm wavelength He-Ne laser intensity, and (2) a low-temperature calibration of the substrate holder thermocouple through monitoring the vacuum background pressure increase during the initial stages of substrate temperature ramping. InP and GaAs substrates were etched using a translationally-activated molecular chlorine beam. Both directional and (111) crystallographic preferential etch profiles were observed. The crystallographic preferential etch was the predominant etch profile, while directional etching was achieved when the beam energy was increased. Etch rates ranging from 0.2 pm/hour to 2.0 pm/hour were obtained at substrate temperatures ranging from 2000C to 3500C under various beam energy conditions. Some C1 2-InP etch mechanics are also proposed and discussed in this thesis.

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“…The InGaAs layer was selectively removed by using fluoridric acid diluted according to the proportions (HF : H 2 O 2 : H 2 O) =( 1: 1: 10) [12]. The etching was performed at 24 °C with an etching speed of 0.63 µm/min.…”

Section: Methodsmentioning

confidence: 99%

Lattice parameter dependence versus composition in semiconductor alloys: the InGaAs case

Ferrari¹,

Villaggi²,

Armani³

et al. 2001

MRS Proc.

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Following recent works that report a non linear dependence of the lattice parameter versus composition in some semiconductor alloys the InGaAs/InP system has been investigated. The lattice parameter and the composition of InGaAs/InP lattice matched heterostructures have been independently determined by measuring the high resolution X-ray diffraction profile and the absorption of the X-ray beam diffracted from the InP substrate. In contrast with previous results that stated a linear dependence of the lattice parameter with composition, a 6% larger In content in the InGaAs/InP lattice matched alloy is found. Such result has been confirmed by the analysis of the X-ray fluorescence induced by an electron beam on the layer and on standards made of InAs and GaAs fine ground crystals. The result is in good agreement with the predictions of models based on the elasticity theory applied on a microscopic scale.

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Chemical Etching Characteristics of InGaAs / InP and InAlAs / InP Heterostructures

Cited by 38 publications

References 3 publications

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices

III-V Compound Semiconductors

Lattice parameter dependence versus composition in semiconductor alloys: the InGaAs case

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