Chemical Vapor Deposition (CVD)

Frey, Hartmut

doi:10.1007/978-3-642-05430-3_9

Cited by 9 publications

(2 citation statements)

References 17 publications

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“…Since the temperature is low, the atoms on the surface cannot freely move toward their zero-energy position. At high energies (with a DC bias for instance) the deposited atoms are closely packed, which results in an intrinsically compressive film [11,20]. On the other hand, in the case of low bombardment ion energies, micro/nano-voids can usually form, resulting in a tensile layer.…”

Section: Depositionmentioning

confidence: 99%

“…The deposition rate of the typical PECVD is higher, which provides the possibility of depositing rather thick layers. Depositing PECVD films at a lower temperature often results in a lower thermal stress level [11]. Furthermore, varying deposition parameters, such as the precursor flow, chamber pressure, and excitation power, also changes the composition of the film, thus provides the possibility of tuning the mechanical (and optical) properties of the film [12].…”

Section: Introductionmentioning

confidence: 99%

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Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

Ghaderi

Graaf

Wolffenbuttel

2016

J. Micromech. Microeng.

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This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from −100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

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Section: Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%