ChemInform Abstract: Chemomechanical Polishing and Etching of GaAs:In and GaAs in Aqueous Solutions of NaOCl.

Khoukh, A.; Krawczyk, Stanisław; Olier, R.; Chabli, Amal; Molva, E.

doi:10.1002/chin.198744003

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Principle Of Gaas Wet Etch1

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2003

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“…17,18) Sodium hypochlorite (NaOCl) can also be used alone or mixed with other solutions, because NaOCl has the functions of both oxidation and reduction. 20) Possible cross section profiles of (001) GaAs by the above aqueous etchants are shown in Fig. 1.…”

Section: Principle Of Gaas Wet Etchmentioning

confidence: 99%

A Novel Micromachining Technique to Fabricate Released GaAs Microstructures with a Rectangular Cross Section

Paik

Kim

Park

et al. 2003

Jpn. J. Appl. Phys.

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The wet etching properties of GaAs in NH 4 OH-H 2 O 2 -H 2 O mixed solutions were investigated, and a fabrication method for producing released GaAs microstructures with a rectangular cross section using a (001) GaAs substrate was developed. To obtain the wet etching properties with respect to the crystallographic orientations, the etch rates and cross sectional etch profiles of (001) GaAs with 16 different compositions were measured. Based on the experimental data, a novel GaAs micromachining method in bulk (001) GaAs is proposed. In this proposed method, anisotropic wet etch, sidewall passivation, and wet undercut etch steps are performed, in order to release the h100i beams with a rectangular cross section. This proposed micromachining method is used to fabricate a released microbridge with a rectangular cross section. The developed GaAs micromachining method will be very useful for low loss, highly-tunable capacitors for RF components.

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Section: Principle Of Gaas Wet Etchmentioning

confidence: 99%