CMOS-Compatible Wearable Sensors Fabricated Using Controlled Spalling

Sakuma, Katsuyuki; Hu, Huan; Liu, Xiao Hu; Ni, Jiamin; Bedell, Stephen W.; Webb, Bucknell C.; Wright, S. L.; Lauro, Paul; Latzko, K.; Agno, Marlon; Tornello, J. A.; Knickerbocker, John

doi:10.1109/jsen.2019.2917278

Cited by 2 publications

(8 citation statements)

References 37 publications

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“…The strain/force sensor exhibits a force sensitivity of around 0.6%/N under a perpendicularly applied force in a three-point bending test. 102 Li et al reported an advanced crack-assisted layer transfer, referred to as 3D spalling process, and the fabrication of a tactile sensor with a serpentine piezoresistor using an exfoliated Si thin film. 103 By utilization of patterning and modification of the stressor layer thickness, the spalling process exhibited 3D control over the shape and thickness of the exfoliated semiconductor thin films.…”

Section: Crack-assisted Layer Transfer With Interfacial Fracture Toug...mentioning

confidence: 99%

“…103 The exfoliated Si thin film based temperature sensor exhibited a temperature coefficient of −0.44%/°C in the range of 34 to 50 °C, which covers the temperature range of a human body (36.5−37.5 °C). 102 5.6. Optical Filters.…”

Section: Crack-assisted Layer Transfer With Interfacial Fracture Toug...mentioning

confidence: 99%

“…Sakuma et al fabricated a 40 μm thick strain/force sensor using a bar-shaped spalled Si. The strain/force sensor exhibits a force sensitivity of around 0.6%/N under a perpendicularly applied force in a three-point bending test . Li et al reported an advanced crack-assisted layer transfer, referred to as 3D spalling process, and the fabrication of a tactile sensor with a serpentine piezoresistor using an exfoliated Si thin film .…”

Section: Device Applicationsmentioning

confidence: 99%

See 2 more Smart Citations

Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects

Lee

Tan

Jagadish

et al. 2020

ACS Appl. Electron. Mater.

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The production of flexible monocrystalline semiconductor thin films less than a few tens of micrometers in thickness is currently receiving huge interest in various emerging applications such as mobile health care (mHealth), wearable devices, smart cities, and Internet of things (IoT). However, conventional techniques fail to produce wafer-scale monocrystalline thin films without the use of sophisticated equipment. Recently, the controlled cracking method has shown promise as a facile and scalable method to produce monocrystalline inorganic semiconductor thin films such as Si, Ge, III–V, and III–N materials. In this method, a crystalline semiconductor thin film can be exfoliated from its thick donor substrate via subsurface crack propagation. The cracking based layer transfer approach does not require expensive processing equipment and enables the production of multiple thin films from the same donor substrate. In this review, we present the working principles, recent progress, and future prospects of this emerging crack-assisted layer transfer technology. The unique advantages of this technology for state-of-the-art flexible (opto)electronics are also highlighted. This review offers insights for the fabrication of large-scale flexible monocrystalline semiconductors, which is crucial for the development of next-generation (opto)electronics.

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Section: Crack-assisted Layer Transfer With Interfacial Fracture Toug...mentioning

confidence: 99%

Section: Crack-assisted Layer Transfer With Interfacial Fracture Toug...mentioning

confidence: 99%

Section: Device Applicationsmentioning

confidence: 99%

See 1 more Smart Citation

Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects

Lee

Tan

Jagadish

et al. 2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Moreover, the thickness of the released layer can be controlled from hundreds of nanometers to tens of micrometers by adjusting the thickness and stress of the Ni film. On the basis of these advantages, the thickness-controlled spalling technique has been applied to a wide range of materials from elemental semiconductors ( 11 , 17 – 24 , 30 , 31 ) to compound semiconductors ( 21 , 25 – 29 ). In particular, this technique has been effectively used in device fabrication with a thin layer of elemental semiconductors (Si and Ge).…”

Section: Introductionmentioning

confidence: 99%

“…In particular, this technique has been effectively used in device fabrication with a thin layer of elemental semiconductors (Si and Ge). For instance, flexible logic and memory ICs based on sub–30-nm CMOS technology ( 17 – 20 ), wearable/stretchable sensors ( 30 , 31 ), and thin-film photovoltaic cells ( 21 – 24 ) for flexible applications have been demonstrated using Si or Ge spalling processes. In practice, the greater potential of this buffer-free mechanical separation technique is derived from the layer release of compound semiconductors, which enables the versatile heterointegration of III-Vs and Si.…”

Section: Introductionmentioning

confidence: 99%

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

et al. 2022

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Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from III-V heterostructures, it is required to embed a mechanically or chemically weak sacrificial buffer beneath the target layers. This requirement severely limits the scope of processable materials and their epi-structures and makes the growth and layer-release process complicated. Here, we report that epitaxial layers in commonly used III-V heterostructures can be precisely released with an atomic-scale surface flatness via a buffer-free separation technique. This result shows that heteroepitaxial interfaces of a normal lattice-matched III-V heterostructure can be mechanically separated without a sacrificial buffer and the target interface for separation can be selectively determined by adjusting process conditions. This technique of selective release of epitaxial layers in III-V heterostructures will provide high fabrication flexibility in compound semiconductor technology.

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CMOS-Compatible Wearable Sensors Fabricated Using Controlled Spalling

Cited by 2 publications

References 37 publications

Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects

Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

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