CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology

Tsai, Stan; Amanapu, H. P.; Xie, Ruilong; Zhang, Junyi; Chung, Kisup; Labelle, Cathy; Huang, Haigou; Han, Ja-Hyung; Koli, Dinesh; Surisetty, C.

doi:10.1149/07704.0169ecst

Cited by 4 publications

(2 citation statements)

References 1 publication

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“…The scaling-down speed of nanoscale semiconductor devices has slowed down, owing to the lithography limit as a result of large surface topography and device structure complexity 12 – 17 . In particular, the need for chemical mechanical planarization (CMP) for the removal of such surface topography has increased in nanoscale semiconductor device fabrication 18 – 21 . Among the CMP processes, shallow trench isolation (STI) CMP is an essential fabrication process for all nanoscale semiconductor devices, and poly-Si stop CMP is also an inevitable fabrication process for three-dimensional (3D) NAND-flash memory 22 – 26 .…”

Section: Introductionmentioning

confidence: 99%

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Son

Jeong

Kim

et al. 2021

Sci Rep

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Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical–mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH)4 abrasives at a pH of 4.0–5.0 and a mixture of CeO2 and Ce(OH)4 abrasives at a pH of 5.5–6.5. The Ce(OH)4 abrasives demonstrate better abrasive stability in the SiO2-film CMP slurry than the CeO2 abrasives and produce a minimum abrasive zeta potential (~ 12 mV) and a minimum secondary abrasive size (~ 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of ~ 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO2-film polishing rate (~ 524 nm/min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches.

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Section: Introductionmentioning

confidence: 99%

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Son

Jeong

Kim

et al. 2021

Sci Rep

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show abstract

“…Chemical mechanical polishing (CMP) is currently used not only in the production of semiconductor devices 1,2 but also in the polishing of base silicon substrates for these devices, 3,4 glass substrates for hard disk drives, [5][6][7] sapphire substrates for LEDs, [8][9][10] and SiC substrates for power devices. [11][12][13][14] The majority of the process is automated, and most polishers for semiconductor devices are equipped with a variety of sensors, including a film thickness meter, to enable various realtime measurements while polishing.…”

mentioning

confidence: 99%

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Uneda¹,

Ota²,

Takiguchi³

et al. 2023

ECS J. Solid State Sci. Technol.

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Herein, a method for predicting real-time removal rate and friction coefficient between the pad and substrate during chemical mechanical polishing was investigated using only the load currents of two motors of a polisher. Polishers for semiconductor devices are equipped with various sensors, enabling a real-time prediction of the removal amount. The polishers used to polish substrates are not usually equipped with sensors, and the polishing time is fine-tuned by skilled-technicians to achieve the desired substrate thickness. However, since every polisher has some motors, predicting the removal rate and friction coefficient using only the real-time data produced by these motors would be beneficial. This study attempts to predict the removal rate and friction coefficient in long-time polishing using a training dataset obtained from short-time polishing. Results showed that by performing extremely low-pressure, long-time polishing to understand the polisher characteristics and then subtracting the polisher characteristics from the motor information during long-time polishing, highly accurate predictions of the removal rate and friction coefficient within ~94% in percent match (prediction accuracy) between the experimental and predicted values can be obtained. Furthermore, slurry degradation during CMP can be monitored using this prediction method.

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New CMP processes development and challenges for 7nm and beyond

Huang

Koli

Zhang

et al. 2018

2018 China Semiconductor Technology International Conference (CSTIC)

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CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology

Cited by 4 publications

References 1 publication

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

New CMP processes development and challenges for 7nm and beyond

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