Coherent Gunn oscillations in Ga
            <sub>x</sub>
            in
            <sub>1−x</sub>
            Sb

Segawa, K.; Miki, Hidejiro; Otsubo, M.; Shirahata, K.; Fujibayashi, Keiji

doi:10.1049/el:19760098

Cited by 22 publications

(7 citation statements)

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“…Some of the important material properties of GaSb are listed in Table I. 5 From device point of view, GaSb based structures have shown potentiality for applications in laser diodes with low threshold voltage, 6,7 photodetectors with high quantum efficiency, 8 high frequency devices, 9,10 superlattices with tailored optical and transport characteristics, 11 booster cells in tandem solar cell arrangements for improved efficiency of photovoltaic cells and high efficiency thermophotovoltaic ͑TPV͒ cells. 12 Interestingly, the spin-orbit splitting of the valence band is almost equal to the energy band gap in GaSb leading to high hole ionization coefficients.…”

Section: Importance Of Gallium Antimonidementioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

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Section: Importance Of Gallium Antimonidementioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

672

396

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“…In the past 3 decades, there has been a growing interest in GaSb as both substrate and active device material, owing to its peculiar structural, electronic, and thermal properties . GaSb-based structures have been proposed for a wide range of applications from high-speed optoelectronics − to high-efficiency solar energy conversion , from gas sensing and environmental monitoring to biomedical imaging and health care …”

Section: Introductionmentioning

confidence: 99%

Theoretical Characterization of GaSb Colloidal Quantum Dots and Their Application to Photocatalytic CO₂ Reduction with Water

Califano

Rodosthenous

2018

ACS Appl. Mater. Interfaces

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With a large exciton Bohr radius and a high hole mobility in the bulk, GaSb is an important semiconductor material for technological applications. Here, we present a theoretical investigation into the evolution of some of its most fundamental characteristics at the nanoscale. GaSb emerges as a widely tunable, potentially disruptive new colloidal material with huge potential for application in a wide range of fields.

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“…Consequently, GaSb based binary and ternary alloys have turned out to be important candidates for applications in longer wavelength lasers and photodetectors for fibre optic communication (Capasso et al 1980). These have stimulated a lot of interest in GaSb for basic research as well as device fabrication (Segawa et al 1976;Motosugi and Kagawa 1980;Hildebrand et al 1981). Although GaSb crystals are widely grown by Czochralski method (Moravec 1993), there are a few reports on the growth of GaSb using other melt techniques, viz.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of indium antimonide and gallium antimonide crystals

Udayashankar

Bhat

2001

Bull Mater Sci

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Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

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Coherent Gunn oscillations in Ga _x in _1−x Sb

Cited by 22 publications

References 0 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Theoretical Characterization of GaSb Colloidal Quantum Dots and Their Application to Photocatalytic CO₂ Reduction with Water

Growth and characterization of indium antimonide and gallium antimonide crystals

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Coherent Gunn oscillations in Ga x in 1−x Sb

Cited by 22 publications

References 0 publications

The physics and technology of gallium antimonide: An emerging optoelectronic material

The physics and technology of gallium antimonide: An emerging optoelectronic material

Theoretical Characterization of GaSb Colloidal Quantum Dots and Their Application to Photocatalytic CO2 Reduction with Water

Growth and characterization of indium antimonide and gallium antimonide crystals

Contact Info

Product

Resources

About

Coherent Gunn oscillations in Ga _x in _1−x Sb

Theoretical Characterization of GaSb Colloidal Quantum Dots and Their Application to Photocatalytic CO₂ Reduction with Water