Colloidal quantum dots for low-cost MWIR imaging

Ciani, Anthony J.; Pimpinella, R. E.; Grein, C. H.; Guyot‐Sionnest, Philippe

doi:10.1117/12.2234734

Cited by 32 publications

(44 citation statements)

References 25 publications

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“…When dealing with the design of infrared detector material, the final judge remains the formation of an image. By coupling a film of HgTe CQD with a silicon read out circuit, the first mid-IR imaging with CQD was recently reported [80]. Figure 8c-d shows an image taken at 120 frame per second to illustrate the faster response than bolometer cameras.…”

Section: Photodetection Properties Of Hgte Hgse and Hgsmentioning

confidence: 99%

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Recent Progresses in Mid Infrared Nanocrystal Optoelectronics

Lhuillier¹,

Guyot‐Sionnest²

2017

IEEE J. Select. Topics Quantum Electron.

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101

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Section: Photodetection Properties Of Hgte Hgse and Hgsmentioning

confidence: 99%

“…b. Spectral dependence of the detectivity of a HgTe CQD film coupled or not to a plasmonic structure, adapted from ref [82]. c. and d. are images of a focal plane array for which the active layer is HgTe CQD, adapted from refs [80,81].…”

Section: Photodetection Properties Of Hgte Hgse and Hgsmentioning

confidence: 99%

Recent Progresses in Mid Infrared Nanocrystal Optoelectronics

Lhuillier¹,

Guyot‐Sionnest²

2017

IEEE J. Select. Topics Quantum Electron.

Self Cite

101

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“…TEM reveals well-defined particles that exhibit a spherical shape at small sizes and a tetrahedral shape at larger sizes. This new controllable synthesis protocol was directly used to fabricate HgTe photodetectors [32, 33] and FPAs [9, 34–36], which will be discussed in detail in the device section. The band structure and band edge dynamics of the HgTe CQDs were also investigated by reversible electrochemistry and a high bandwidth optical setup to gain a more complete insight on the electronic structure [37, 38].…”

Section: Colloidal Synthesis and Characterization Of Thermal Infraredmentioning

confidence: 99%

Colloidal quantum dots for thermal infrared sensing and imaging

et al. 2019

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Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal infrared spectral regions where no other solution-processed material options exist. This mini-review collates recent research reports that push the technological envelope of colloidal quantum dot-based photodetectors toward mid- and long-wavelength infrared. We survey the synthesis and characterization of various thermal infrared colloidal quantum dots reported to date, discuss the basic theory of device operation, review the fabrication and measurement of photodetectors, and conclude with the future prospect of this emerging technology.

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“…Analytical simulation of PbSe [10] and HgCdTe [11] based detectors have been carried out which also considering pixel structure realizable through complex lithographic technique. We have utilized the advantages of colloidal quantum dots (CQDs) [12−16] with lower fabrication costs [17] to develop MWIR FPA. To develop a MWIR FPA using the advantages of colloidal quantum dots (CQDs), a suitable charge-tovoltage/current conversion circuit is required to extract the photo-generated charge carrier from the QDs and convert it to a measurable quantity, such as the voltage or current.…”

Section: Introductionmentioning

confidence: 99%

Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC

Chatterjee

Pendyala

Jagtap

et al. 2019

e-J. Surf. Sci. Nanotechnol.

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The dominant photon detectors and focal plane arrays (FPAs) in the mid-wave infrared (MWIR) range (λ = 3 μm to 5 μm) use single crystal InSb and HgCdTe materials. The cost of these detectors is high, and cooling at approximately 80 K to 120 K is required to reduce the dark current. Colloidal quantum dots (CQDs) can be used to provide the speed and detectivity (D*) of the quantum detectors with lower fabrication costs than those of single crystal epitaxial materials. The aim of this study is to develop a MWIR area array sensor with an HgCdTe-ternary alloyed semiconductor CQD using a commercially available silicon readout integrated circuit (ROIC). First, we synthesized a solution processed HgCdTe CQD responsive in the MWIR range at room temperature and developed a Schottkey junction photodiode array of 10 × 10 pixels based on the same quantum dots (QDs) to produce a HgCdTe-Si interface suitable for a MWIR photodiode at room temperature. After ensuring its functionality, we developed a 320 × 256-pixel focal plane array (FPA) responsive in the MWIR region by hybridization of the HgCdTe CQD layer over a silicon ROIC die with a direct injection input circuit. The FPA was operated using an indigenously developed Field Programmable Gate Array (FPGA)-based drive unit, and different IR targets were imaged to evaluate its use as a low-cost MWIR FPA. NEΔT value of 4 K achieved at room temperature.

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Colloidal quantum dots for low-cost MWIR imaging

Cited by 32 publications

References 25 publications

Recent Progresses in Mid Infrared Nanocrystal Optoelectronics

Recent Progresses in Mid Infrared Nanocrystal Optoelectronics

Colloidal quantum dots for thermal infrared sensing and imaging

Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC

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