Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305GHz

Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

“…The value of 𝑓 max is higher than recent reports in Ref. [7] due to its small intrinsic base-collector capacity 𝐶 bci and base resistance 𝑅 bb as discussed above.…”

“…Compared with Ref. [7] we measured a BV CBO over 4 V. It makes the four-finger InP DHBT suitable for a power amplifier.…”

“…Compared with the previous four-finger In-GaAs/InP DHBT result reported in Ref. [7], the emitter width is narrowed from 1 µm to 0.5 µm, which can effectively reduce the emitter junction area, leading to a smaller emitter junction capacity 𝐶 be and intrinsic base-collector capacity 𝐶 bci .…”

“…Common-emitter (CE) configuration is frequently used nowadays in sub-millimeter amplifier design. However, according to recent research, [7] InP double heterojunction bipolar transistors (DHBTs) in common-base (CB) configurations can yield a much higher power gain at high frequency, especially near the cutoff frequency. Their maximum stable gain (MSG) extends into higher frequencies in common base than in common emitter configuration.…”

A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO= 10.6 V

“…The geometry parameters of the devices are similar to those of Ref. [4]. In contrast to most recent reports in China OE7 9 , the InP DHBTs in this work were designed and fabricated with standard manufacturing techniques such as i-line stepper lithography, self-aligned contact and selective dry/wet etching, etc.…”