Compact Wavelength-Selective Functions in Silicon-on-Insulator Photonic Wires

Bogaerts, Wim; Dumon, Pieter; Thourhout, Dries Van; Taillaert, Dirk; Jaenen, Patrick; Wouters, Jan; Beckx, S.; Wiaux, Vincent; Baets, Roel

doi:10.1109/jstqe.2006.884088

Cited by 324 publications

(196 citation statements)

References 21 publications

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“…This design rule usually works well especially for low index-contrast (∆) optical waveguides (e.g., SiO 2 -on-Si buried optical waveguides). However, it becomes very different for small optical waveguides with very high ∆, e.g., submicron SOI waveguides, which have been used widely for ultra-compact CMOS-compatible PICs [45][46][47][48][49][50][51][52][53][54][55][56]. For high-∆ optical waveguides, mode conversion between the eigenmodes may occur in an adiabatic tapered structure due to the mode hybridization at some special waveguide widths [57][58][59][60][61][62].…”

Section: Tapered Optical Waveguidesmentioning

confidence: 99%

Silicon Multimode Photonic Integrated Devices for on-Chip Mode-Division-Multiplexed Optical Interconnects

Dai¹,

Jian²,

He³

2013

PIER

116

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Abstract-Multimode spatial-division multiplexing (SDM) technology has attracted much attention for its potential to enhance the capacity of an optical-interconnect link with a single wavelength carrier. For a mode-multiplexed optical-interconnect link, the functional elements are quite different from the conventional ones as multiple modes are involved. In this paper we give a review and discussion on multimode photonic integrated devices for mode-multiplexed opticalinterconnects. Light propagation and mode conversion in tapered waveguides as well as bent waveguides are discussed first. Recent progress on mode converter-(de)multiplexers is then reviewed. The demands of some functional devices used for mode-multiplexed opticalinterconnects are also discussed. In particular, the fabrication tolerance is analyzed in detail for our hybrid demultiplexer, which enables mode-/polarization-division-(de)multiplexing simultaneously.

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Section: Tapered Optical Waveguidesmentioning

confidence: 99%

Silicon Multimode Photonic Integrated Devices for on-Chip Mode-Division-Multiplexed Optical Interconnects

Dai¹,

Jian²,

He³

2013

PIER

116

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“…Signal routing and wavelength multiplexing/demultiplexing are also important functions that are required for optical communication systems. Various optical wavelength-selective passive components based on silicon are discussed by Bogaerts et al from Ghent University (Belgium) [14], including arrayed waveguide gratings (AWGs), Mach-Zehnder lattice fi lters and ring resonators. All of these passive devices can be fabricated using CMOS-compatible processes including deep-ultraviolet lithography.…”

Section: Passive Waveguide Devicesmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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“…We have already demonstrated propagation losses as low a 2.4dB/cm in straight photonic wires [1], [2]. Bend losses remain manageable for bends with a radius larger than 2µm [3]. Photonic wires are more dispersive than low-contrast waveguides, with a group index between 4 and 4.7.…”

Section: Waveguides Fabrication and Characterizationmentioning

confidence: 99%

“…Fig. 1 shows an AWG from [3] with 16 × 200GHz channels. To reduce the crosstalk due to phase noise in the narrow photonic wires we have broadened the waveguides in the long straight sections [3].…”

Section: A Arrayed Waveguide Gratingsmentioning

confidence: 99%