Comparative study of electrical properties of nano to polycrystalline diamond films

Vojs, Marián; Kromka, Alexander; Ižák, Tibor; Škriniarová, J.; Νovotný, I.; Valent, Peter; Michalka, M.; Kováčik, Tomáš; Veselý, M.

doi:10.1088/1742-6596/100/5/052097

Cited by 6 publications

(1 citation statement)

References 8 publications

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“…Intrinsic as well as boron-doped diamonds (BBDs) have many remarkable properties for application in microelectrochemical systems such as tribotester [1], various types of resonators [2][3][4][5][6], cantilevers [7], tip probes [8] and a variety of other micro-electro-mechanical systems (MEMS) [9]. The highest hardness, tensile strength, electrical properties [10,11], possibility of long-term surface termination [12,13], large electrochemical window, low background current, mechanical and chemical stability and corrosion resistance designates diamonds a unique material in microfluidics [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Al and Cu masks used for patterning boron-doped diamonds in oxygen plasma

Marton

Ritomský

Řeháček

et al. 2019

J. Micromech. Microeng.

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In this paper we investigate the influence of different metallic (or metal-based) masking materials and plasma techniques for etching and patterning polycrystalline boron-doped diamond thin films. Lift-off technique was used to prepare various testing mask patterns with dimensions ranging from 1 μm to 15 μm. The results of plasma etching utilizing 100 nm Al and Cu masks are compared. Radio frequency and inductively coupled pure oxygen plasma techniques were used to obtain the fine etched structures. A simple etching scheme describing the obtained results is presented for each type of plasma technique and mask type. Although the Al mask is widely believed to have outstanding properties over other metallic materials, we found that the Cu mask exhibits lower side edge etching for both types of plasma techniques. A formation of thick and crystalline copper oxide layer in contrast with thin amorphous aluminum oxide is believed to be the reason for this behavior. Consequently, the etched structures also possessed much better side wall angles which is a key parameter for micro-fabrication of boron doped diamond microelectrodes, microfluidics, sensors and microelectromechanical devices in general.

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