Comparative study of low dielectric constant material deposited using different precursors

Abstract

Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition in this work. The experimental results indicate that DEMS-based low-k films have superior electrical and reliability performances than 3MS-based low-k films. Furthermore, the DEMS-based low-k films exhibit a higher mechanical strength, chemical and thermal stability, and better adhesion strength on various barrier films. Therefore, the DEMS-based films are promising low-k materials, which can be integrated in a very large scale integration circuit as an interlayer dielectric material. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592888

Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects

“…Oh et al reported the FT‐IR and NMR results for films obtained using ICP CVD from a bistrimethylsilylmethane (BTMSM; [(CH 3 ) 3 Si] 2 CH 2 ) and O 2 mixture. Wei et al reported the characteristics of low‐k films deposited using PECVD with 3MS and mDEOS as precursors, as determined using FT‐IR, XPS, and 29 Si NMR. Cross‐linking reactions were found to form dimethyl Si‐O‐Si components in the SiOC film.…”