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Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition in this work. The experimental results indicate that DEMS-based low-k films have superior electrical and reliability performances than 3MS-based low-k films. Furthermore, the DEMS-based low-k films exhibit a higher mechanical strength, chemical and thermal stability, and better adhesion strength on various barrier films. Therefore, the DEMS-based films are promising low-k materials, which can be integrated in a very large scale integration circuit as an interlayer dielectric material. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592888

The resistance, resistance versus temperature, thermal stability, electrical stress, and constant voltage reliability stress The Ti/TiN thin film resistors were studied. The results indicate that Ti/TiN thin film resistor has excellent thermal stability up to 350oC. According to the electrical measurements, Ti layer has a weaker electrical resistance than the TiN layer. Additionally, the main failure mechanism of Ti/TiN thin film resistors is thermally activated by Joule-heating effect. The thermal activation energy is determined to be 1.3 for failure of the Ti layer and 1.8 eV for failure of the TiN layer. Based on these results, Ti/TiN thin film resistors are projected to be electrically stable for ten years of operation if their temperature is kept below 311oC.

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