Comparison and analysis of integrated passive device technologies for wireless radio frequency module

Abstract

We have investigated the existing integrated passive device (IPD) technologies for cost effective IPD solutions for discrete radio frequency (RF) module. Based upon the investigation in terms of cost, size, performance & technology maturity, it comes out that silicon, glass & LTCC are the suitable technologies. We have designed IPDs using these technologies having same foot print to satisfy Intel Wi-MAX specs. Have taped out, validated the samples and made an electrical performance and cost comparison among three technologies. Result shows that Si_IPD & Glass_IPD both have well enough electrical performance required for Wi_MAX solution at lower cost and equivalent size compared to LTCC. I.

System integration using silicon-based integrated passive device technology

“…Intel Corporation once investigated a silicon-based IPD WiMax module with comparison to a glass-based IPD module and LTCC-based IPD module in terms of cost, size, performance, and technology maturity [10]. It is concluded that the silicon-based IPD technology is a good choice for RF modules.…”

Low-Noise and High-Linearity Wideband CMOS Receiver Front-End Stacked With Glass Integrated Passive Devices

“…where is given in (8). Significantly, the interstage matching of cascaded stages can be achieved by designing the GIPD balun, owing to that the proposed bifilar transformer-based GIPD balun has an impedance transformation between primary and secondary windings.…”

“…This paper proposes a low-noise and high-linearity wideband flip-chip CMOS RFE stacked with glass integrated passive devices (GIPDs). In the past, a number of GIPD designs have been proposed for RFE applications [8]- [10]. In [8], the performance of the bandpass filter and diplexer using GIPD technology was investigated and compared with those using silicon and lowtemperature co-fired ceramic (LTCC) technologies.…”

“…In the past, a number of GIPD designs have been proposed for RFE applications [8]- [10]. In [8], the performance of the bandpass filter and diplexer using GIPD technology was investigated and compared with those using silicon and lowtemperature co-fired ceramic (LTCC) technologies. Recently, parametric designs of a Marchand balun [9] and balun bandpass filter [10] using GIPD technology were developed based on a modeling approach.…”

2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor

“…Reference [13] used MCM-L technology into the passive elements to ensure that the passive elements had a high-Q. LTCC technology uses vertically stacked multiple metal layers and co-fired in ceramic substrate [14]. The advantage of LTCC is its high degree of vertical integration for several components such as inductors, capacitors, transformers, and baluns with low loss and compact size.…”