Comparison of lattice parameters obtained from an internal silicon monocrystal standard

Abstract

The lattice parameter of a highly perfect monocrystalline silicon sample is measured in six laboratories using three different diffraction methods. The quality of the measurements and of the applied corrections is already sufficiently high to compare lattice parameters measured by means of the used methods and CuKα radiation on an absolute scale with an accuracy of about Δa/a = 3 × 10−6.

Temperature dependence of lattice parameters of SBN single crystals in the vicinity of their structural phase transitions

“…Basing on the dynamical theory of X‐ray scattering the necessary corrections were simulated. Therefore using this measuring procedure one may determine the lattice parameters of single crystals with an accuracy as high as δa/a = 3 × 10 −6 , provided that good quality single crystals are used. For such precise measurements X‐ray metric value of λ CuK α 1 = 0.15405929 ± 5 × 10 −7 nm is required .…”

Lattice parameter measurements of boron doped Si single crystals

“…Despite intensive efforts, basic questions about point defects in silicon crystals are still unanswered and hotly disputed. An attempt to examine the influence of boron impurities on Si single crystals lattice parameter was undertaken in this study using the Bond method [1], known from previous determination of lattice parameters of standard Si single crystal with precision ∆a/a = 10 -6 [2]. However, to be studied single crystals should have a high degree of structural perfection.…”

Structure diagnostics of heterostructures and multi-layered systems by X-ray multiple diffraction

“…10 À5 . At the same time the Bond method and the method of LLL interferometry (Burke & Tomkeieff, 1969;Berger, 1984Berger, , 1986Hä rtwig et al, 1994;Becker, 2001) give a much greater accuracy, at the level Áa=a ' 10 À7 =10 À8 .…”