Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

Lee, Ju-Wan; Lee, Byoung Hun; Shin, Hyungcheol; Park, Byung‐Gook; Park, Young June; Lee, Jong-Ho

doi:10.1109/led.2010.2058839

Cited by 10 publications

(8 citation statements)

References 10 publications

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“…After charging the capacitor, the stored charge will keep getting lost due to the leakage current of the transistor and capacitor. In order to ensure that the stored data are correct, the capacitors must be refreshed (charged) periodically . It is worth noting that the refresh process is responsible for much of DRAM power consumption.…”

Section: D Materials Toward Volatile Memory Applicationsmentioning

confidence: 99%

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Hou

Chen

Zhang

et al. 2019

Adv Elect Materials

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With the rapid development of the information age, more and more new technologies such as big data and cloud computing are beginning to emerge. As a result, the demand for high data‐storage density is becoming more and more urgent. In the past 10 years, data‐storage density has been greatly improved by reducing the size of memory cells. However, as semiconductor technology nodes have shrunk, a number of problems have appeared in metal–oxide–semiconductor field‐effect transistor (MOSFET)‐based memory cells, such as gate‐induced drain leakage, drain‐induced barrier lowering, and reliability issues. Fortunately, due to their atomic thickness, high mobility, and sustainable miniaturization properties, 2D atomic crystals (2D materials) are considered the most promising substitute for silicon to solve those issues. This review investigates the use of 2D materials in nonvolatile and volatile memories, including MOSFET‐based memory, magnetic random‐access memory, resistive random‐access memory, dynamic random‐access memory, semi‐floating‐gate memory, and other novel memories.

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Section: D Materials Toward Volatile Memory Applicationsmentioning

confidence: 99%

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Hou

Chen

Zhang

et al. 2019

Adv Elect Materials

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“…Hence, RTN has been attracting more attentions for exploring trap property and behavior. Although the results of RTN in HK/MG [20]- [22] and strained devices [23]- [25] had been studied, the RTN characteristics in uniaxial strained HK/MG pMOSFETs are still not clear. In this paper, through the comparison between strained and unstrained devices, we report the trap properties for uniaxial strained HK/MG pMOSFETs utilizing RTN measurement.…”

Section: Impact Of Uniaxial Strain On Random Telegraphmentioning

confidence: 99%

Impact of Uniaxial Strain on Random Telegraph Noise in High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula>/Metal Gate pMOSFETs

Huang¹,

Chen²,

Tsai³

et al. 2015

IEEE Trans. Electron Devices

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The random telegraph noise (RTN) characteristics of high-k (HK)/metal gate (MG) pMOSFETs with uniaxial compressive strain have been investigated. The configurationcoordinate diagram and band diagram are both established by extracting trap parameters, including capture and emission time, activation energy for capture and emission, trap energy level, and trap location in gate dielectric. Through a comparison of RTN results and gate-leakage current density ( J G ) between HK/MG pMOSFETs with and without uniaxial compressive strain in channel, it is found that the trap position from the insulator/semiconductor interface is reduced in the uniaxial compressive strained HK/MG pMOSFETs. This is reasonably attributed to the strain-increased tunneling barrier height and out-of-plane effective mass, which brings about the reduction in the tunneling attenuation length. Meanwhile, it can also be demonstrated by the lower J G in uniaxial compressive strained HK/MG pMOSFETs. Index Terms-High-k (HK)/metal gate (MG) pMOSFETs, random telegraph noise (RTN), SiGe source/drain (S/D), uniaxial compressive strain.

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“…3b [6,8]. The activation energy of the trap was 748 meV and 397 meV in high state and low state, respectively.…”

mentioning

confidence: 94%

“…Because of the capture and emission of electrons from a single trap, the output current changes discretely, known as random telegraph noise (RTN) [3][4][5][6][7]. Therefore, comprehending the property of the reverse leakage current and finding the origin of the traps of an LED become more important.…”

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confidence: 99%

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Random telegraph noise in GaN-based light-emitting diodes

et al. 2011

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Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the currentvoltage (I-V ) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.

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Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

Cited by 10 publications

References 10 publications

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Impact of Uniaxial Strain on Random Telegraph Noise in High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula>/Metal Gate pMOSFETs

Random telegraph noise in GaN-based light-emitting diodes

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