Comparison of MBE Growth of InSb on Si (001) and GaAs (001)

Abstract

We describe the epitaxial growth of InSb films on both Si (001) and GaAs (100) substrates using molecular-beam epitaxy and discuss the structural and electrical properties of the resulting films. The complete 2 lm InSb films on GaAs (001) were grown at temperatures between 340°C and 420°C and with an Sb/In flux ratio of approximately 5 and a growth rate of 0.2 nm/s. The films were characterized in terms of background electron concentration, mobility, and x-ray rocking curve width. Our best results were for a growth temperature of 350°C, resulting in room-temperature mobility of 41,000 cm 2 /V s. For the growth of InSb on Si, vicinal Si(001) substrates offcut by 4°toward (110) were used. We investigated growth temperatures between 340°C and 430°C for growth on Si(001). In contrast to growth on GaAs, the best results were achieved at the high end of the range of T S = C, resulting in a mobility of 26,100 cm 2 /V s for a 2 lm film. We also studied the growth and properties of InSb:Mn films on GaAs with Mn content below 1%. Our results showed the presence of ferromagnetic ordering in the samples, opening a new direction in the diluted magnetic semiconductors.

Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBE

“…The remanence M r of the sample with 0.7% Mn is approximately 17% of the saturation magnetization M s , whereas samples with 0.4% and 0.2% Mn have M r /M s ratio of about 47% and 77%, respectively. The diluted ferromagnetic matrix also results in an enhanced magnetoresistance response at low field and anomalous Hall effect at low temperature [11]. The results show that the saturation magnetization of the films depends on Mn concentration.…”

“…Based on an absolute temperature calibration that was done for significantly higher temperatures, we estimate the actual surface temperature to be about 310 1C. This temperature was earlier determined to be optimum in our MBE system for InSb/GaAs growth [11]. A (2 Â 4) reconstruction of the RHEED pattern was observed during the growth of the InSb.…”

A comparison of the low frequency noise in InSb grown on GaAs and Si by MBE

“…For the samples GAAS350 and GAAS360 the substrates were GaAs with growth temperatures of 350 and 360 3 C respectively. For the sample SI420 a GaSb/AlSb superlattice has been grown on p-type silicon (1 0 0), cut off 4 3 towards (1 1 0), before depositing the InSb layer at a substrate temperature of 420 3 C. Further details for the growth and structural characterization of latter sample can be found in [1,2].…”

Матричные фотоприемные устройства на основе слоев InSb, выращенных методом молекулярно-лучевой эпитаксии

“…В качестве исходного материала используют монокристаллический InSb или эпитаксиальные слои InSb, обычно выращива-емые методом молекулярно-лучевой эпитаксии (МЛЭ). Эпитаксиальные слои менее дефектные, более однород-ные, имеют меньшую концентрацию фоновой примеси, чем монокристаллические пластины, что позволяет по-высить характеристики МФПУ [4][5][6][7]: -уменьшить процент дефектных элементов, -повысить количество элементов в матрице, -уменьшить фотоэлектрическую и динамическую взаимосвязь элементов, -повысить рабочую температуру, -уменьшить вес. Кроме того, эпитаксиальное выращивание позволяет оптимизировать характеристики детекторов путем со-здания многослойных эпитаксиальных гетероструктур с заданным распределением профиля легирования и соста-ва по толщине, что открывает возможность дальнейшего улучшения характеристик МФПУ [8].…”