Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

SOI Substrate Removal for SEE Characterization: Techniques and Applications

“…For example, Fig. 13 is a plot of the heavy-ion SEU cross section for Sandia 1-Mbit SRAMs irradiated from the front side with the substrate in place (standard SEU characterization) and irradiated from the backside with the substrate removed [7]. The SRAMs were irradiated at the Texas A&M University heavy-ion cyclotron (TAMU).…”

“…Fig. 14 is a comparison of TPA SEU measurements on Sandia 1-Mbit SRAMs with and without the back substrate removed [7]. Plotted are the heavy-ion threshold LETs ( ) versus the square of the laser pulse threshold energy for six of the 64-kbit blocks with different feedback resistors that make up the 1-Mbit Sandia SRAM.…”

SOI substrate removal for SEE characterization: Techniques and applications

“…For example, Figure 13 is a plot of the heavy-ion SEU cross section for Sandia 1-Mbit SRAMs irradiated from the front side with the substrate in place (standard SEU characterization) and irradiated from the backside with the substrate removed [7]. The SRAMs were irradiated at the Texas A&M University heavy-ion cyclotron (TAMU).…”

“…By removing the back substrate, both SPA and TPA laser measurements can be made from the backside. Figure 14 is a comparison of TPA SEU measurements on Sandia 1-Mbit SRAMs with and without the back substrate removed [7]. Plotted are the heavy-ion threshold LETs versus the square of the laser pulse energy threshold for six of the 64-kbit blocks with different feedback resistors that make up the 1-Mbit Sandia SRAM.…”

“…Work is in progress to understand the mechanisms for charge collection with and without the back substrate [7].…”