Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels

Elsayed, M. Abdel-Hady; Pananakakis, G.; Kamarinos, G.

doi:10.1016/0038-1101(85)90095-4

Cited by 22 publications

(7 citation statements)

References 24 publications

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“…For a given temperature, σ Fast is quasi-constant and independent of surface potential near the mid-gap. We observe a plateau-like behaviour in good agreement with most of the results previously published [1,22,23]. However, the conclusions of Singh and Simmons [26] are different, because in their study the capture cross section of 'fast' states decreases exponentially in the whole bandgap.…”

Section: Resultssupporting

confidence: 90%

“…Figures 6 and 7 also depict a quantitative relation between the capture cross section and the 'quality' of the interface and we can see that the capture cross section av-erage near mid-gap increases while the 'quality' of interface diminishes. These first results confirm the published data on the conductance spectroscopy method [22][23][24][25].…”

Section: Resultssupporting

confidence: 89%

“…However, the conclusions of Singh and Simmons [26] are different, because in their study the capture cross section of 'fast' states decreases exponentially in the whole bandgap. As a matter of fact, this plateau near mid-gap is directly associated with the exponential evolution of lifetime versus energy frequently observed from different experimental procedures [6,22,23]. Therefore, we think that an exponential evolution of capture cross section should be associated with 'slow' states as proposed in figure 8.…”

Section: Resultsmentioning

confidence: 67%

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Determination of slow- and fast-state distributions using high-temperature conductance spectroscopy on MOS structures

Duval

Lheurette

Ketata

et al. 2001

Semicond. Sci. Technol.

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This letter presents an experimental study of interface trap parameters versus energy. Our method is based on conductance measurements as a function of angular frequency and temperature G(ω, T ). The temperature is swept between 300 and 500 K in order to increase the mid-gap sensitivity. Capacitance as a function of voltage is used to establish the relation between the surface potential and the gate voltage at each temperature value. Then the conductance dispersion as a function of frequency is analysed in order to determine the distribution of the interface states D it and of their capture cross section σ n,p . Our results are in good agreement with those published on DLTS measurements. This confirms the capability of this technique compared with emission time spectroscopy, which implies a complex treatment of the measured data. Our G(ω, T ) procedure brings an accurate observation of two different populations of traps and we propose a classification of 'slow' and 'fast' states.

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Section: Resultssupporting

confidence: 90%

Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 67%

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Determination of slow- and fast-state distributions using high-temperature conductance spectroscopy on MOS structures

Duval

Lheurette

Ketata

et al. 2001

Semicond. Sci. Technol.

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“…In fact, studies that used Nicollian and Goetzberger's conductance method in the Si/SiO 2 system show that r p;n is largely energy independent in the mid-gap region, while it decreases rapidly at band edges. [53][54][55] These parametrisations are used as a first approximation to understand how S ef f is affected by different energy dependencies in S n;p . Figure 4 illustrates the influence of Equation (10) on Equation (4) for typical reported values of the parameters.…”

Section: E the Effect Of Electron And Hole Recombination In Effectivmentioning

confidence: 99%

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Wilshaw

2017

Journal of Applied Physics

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The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices, including solar cells, laser diodes, and photodetectors. The theoretical model and a solution algorithm for surface recombination have been previously reported. However, their successful application to experimental data for a wide range of both minority excess carrier concentrations and dielectric fixed charge densities has not previously been shown. Here, a parametrisation for the semiconductor-dielectric interface charge Qit is used in a Shockley-Read-Hall extended formalism to describe recombination at the c-Si/SiO2 interface, and estimate the physical parameters relating to the interface trap density Dit, and the electron and hole capture cross-sections σn and σp. This approach gives an excellent description of the experimental data without the need to invoke a surface damage region in the c-Si/SiO2 system. Band-gap tail states have been observed to limit strongly the effectiveness of field effect passivation. This approach provides a methodology to determine interface recombination parameters in any semiconductor-insulator system using macro scale measuring techniques.

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“…Thus, one can conclude that the current noise is due to the interface states in spite of the fact that the studied diodes show near-ideal static characteristics. 16 Recently, it has been shown that the random walk of electrons via the interface states modulates the barrier height and, in turn, results in the current fluctuation. 16 For a Schottky diode with uniform energy distribution of interface trap states, according to the random walk model, the noise intensity is 17…”

Section: ͑4͒mentioning

confidence: 99%

Investigation of noise sources in platinum silicide Schottky barrier diodes

Papatzika

Hastas

Angelis

et al. 2002

Applied Physics Letters

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Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels

Cited by 22 publications

References 24 publications

Determination of slow- and fast-state distributions using high-temperature conductance spectroscopy on MOS structures

Determination of slow- and fast-state distributions using high-temperature conductance spectroscopy on MOS structures

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

Investigation of noise sources in platinum silicide Schottky barrier diodes

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