Comprehensive simulation of electron-beam lithography processes using prolith/3d and temptation software tools

Babin, S.; Kuzmin, Igor Yu.; Mack, Chris A.

doi:10.1016/s0167-9317(01)00522-6

Cited by 4 publications

(3 citation statements)

References 2 publications

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“…This methodology presupposes the use of an accurate simulation tool, and it has been widely applied with significant success in the case of integrated circuit fabrication with optical lithography (e.g. [10,11]).…”

Section: Introductionmentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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High temperature superconducting (HTS) devices offer significant performance (higher signal to noise ratio, sensitivity etc) improvement over conventional devices, becoming more prominent when device dimensions are scaled down. A typical technology for the fabrication of devices with very small critical dimensions is electron beam lithography. In the current work, a detailed study of the electron beam lithography process is presented using two simulation methods: one based on Monte Carlo simulation and one based on the Boltzmann transport equation. Simulation energy deposition results are compared with experimental ones in the case of Si and superconducting substrates for the first time, with satisfactory agreement found. The experimental data for statistical distributions of the scattered electrons were calculated in the case of an epoxy based chemically amplified resist film deposited on Si and on Y Ba2Cu3O7−δ/SrTiO3. The substrate strongly influences the distribution of the backscattered electrons due to the different effective atomic number and the mass densities of the substrate and YBCO layer are studied. It is shown that the decrease of the effective atomic numbers of the substrates (MgO and SrTiO3 in comparison with YBCO) leads to an increase in the external proximity effect obtained in regions far from the point of beam incidence on the resist (2 µm for 25 keV and 10–11 µm for 75 keV in the case of MgO). On MgO and SrTiO3 substrates the proximity effect is lower than on YBCO substrate (bulk YBCO) in regions near to the point of beam incidence. Using simulation tools, accurate prediction of final resist profiles (after development) over a wide exposure dose range of dense sub-quarter-micron structures is performed for both Si and superconducting substrates.

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Section: Introductionmentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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“…Proximity effect can be expressed by the point spread function (PSF) which represents the absorbed energy distribution in radial distance from the point of incidence after point exposure [5]. The PSF are usually obtained by Monte Carlo simulation using various algorithms containing physical model of electron interactions in defined materials (mostly two layer sandwichsubstrate and resist) [6]. Mathematically it can be described by double Gaussian approximation [7]:…”

Section: Introductionmentioning

confidence: 99%

PEC Reliability in 3D E-beam DOE Nanopatterning.

2015

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“…[1][2][3][4] The deposited energy distribution, created during electron beam ͑EB͒ exposure ͑step 1, Fig. The high-throughput lithography requirements of current microfabrication of patterns with dimensions of about hundreds of nanometers become critical due to high costs associated with the equipment and materials.…”

Section: Introductionmentioning

confidence: 99%

Some peculiarities of resist-profile simulation for positive-tone chemically amplified resists in electron-beam lithography

Vutova

Koleva

Mladenov

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography J. Appl. Phys.Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writingIn the present work, we numerically modeled the processes of exposure and development of the CAMP6 chemically amplified resist during electron-beam lithography. The radial distributions of the absorbed electron energy in the resist for a zero-width ␦-function 30 keV electron beam are obtained by Monte Carlo simulation. These distributions ͑discrete data͒ are approximated by an analytical function ͑sum of double Gaussian and an exponential function͒. The values of the parameters of the function are calculated using an original Monte Carlo technique, and their dependencies on the resist thickness ͑d = 100, 200, 600, 1000, and 1500 nm͒ at two resist depths are presented. Using these parameters' values, we performed a computer simulation of the process of developing the resist taking into account its peculiarities due to the complicated mechanism of resist removal from soluble resist areas. We obtained profiles at various development times of a single 100 nm line.

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Comprehensive simulation of electron-beam lithography processes using prolith/3d and temptation software tools

Cited by 4 publications

References 2 publications

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

PEC Reliability in 3D E-beam DOE Nanopatterning.

Some peculiarities of resist-profile simulation for positive-tone chemically amplified resists in electron-beam lithography

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