Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm

Shi, Tuanwei; Fu, Mengqi; Pan, Dong; Zhao, Jianhua; Chen, Qing

doi:10.1088/0957-4484/26/17/175202

Cited by 22 publications

(27 citation statements)

References 35 publications

(62 reference statements)

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“…Several studies with diameters lower than 30 nm have been published, ,,, and the diameter effect has been studied in depth in the literature. , There, it is shown how the I ON / I OFF ratio and threshold voltage increases when the NW diameter decreases, explained by a bandgap increase due to quantum confinement effects. However, for such reduced diameter dimensions, crystal phase and orientation of the InAs NWs impact the electrical properties of the NW-FETs and yield new challenges to measure and decrease contact resistance. , On the other hand, the NW sidewall facet, roughness, and the corresponding interface trap density between the oxide and the channel degrades the subthreshold performance . Reports on high- k dielectrics/gate engineering in In(Ga)As NWs include Y 2 O 3 /HfO 2 , ultrathin parylene films, sputtered and ALD-deposited Al 2 O 3 , surface decoration of metal-oxide nanoparticles, and partial-gate .…”

Section: Iii–v Nanowire Growth and Devicesmentioning

confidence: 99%

“…However, for such reduced diameter dimensions, crystal phase and orientation of the InAs NWs impact the electrical properties of the NW-FETs 239 and yield new challenges to measure 249 and decrease contact resistance. 235,250 On the other hand, the NW sidewall facet, roughness, and the corresponding interface trap density between the oxide and the channel degrades the subthreshold performance. 211 Reports on high-k dielectrics/gate engineering in In(Ga)As NWs include Y 2 O 3 /HfO 2 , 237 ultrathin parylene films, 251 sputtered 221 and ALD-deposited 252 Al 2 O 3 , surface decoration of metal-oxide nanoparticles, 253 and partial-gate.…”

Section: Iii−v Nanowire Devicesmentioning

confidence: 99%

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Synthesis and Applications of III–V Nanowires

et al. 2019

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Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

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Section: Iii–v Nanowire Growth and Devicesmentioning

confidence: 99%

Section: Iii−v Nanowire Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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“…Semiconductor nanowires (NWs) are attractive building blocks for nanoelectronics owing to their favorable electrostatic geometry. − Among the class of NWs, InAs NWs have shown great potential for further promoting the performance of electronic devices and have attracted intense research interest, mainly because of their high electron mobility as compared with Si and most of other III–V NWs and their ohmic contacts with metals. ,,− Besides, InAs NWs have also shown rich applications in quantum devices for researches on novel and exciting physical phenomena owing to their strong spin–orbit coupling and large electron Landé g factor. − The energy band structure of InAs NWs has been theoretically predicted to be different in various low index growth directions. − For instance, a smaller effective mass and higher mobility have been predicted along some particular directions in InAs NWs with small diameter, − so that fabricating devices along these orientations might improve the speed of the devices. However, when different calculation methods, geometry sizes, and surface passivating conditions were used in the theoretical works, discrepant results have been obtained for some key parameters of the energy band structure, such as the bandgap ( E g ) and the effective mass in different oriented InAs NWs. − Also, without relevant solid input parameters from experimental works for modeling, it is very difficult to precisely estimate the band structure of the NWs used in experiments.…”

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confidence: 99%

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Tang

et al. 2016

Nano Lett.

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We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

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“…At high V G the conductance curve flattens as the total resistance R = R NW + 2 R C + R S becomes dominated by the series resistance R S and contact resistance R C between the nanowires and metal electrodes. Although the nanowire resistance is not negligible, − this gives an upper limit of R C from ∼0.5 to 7.4 kΩ across the array.…”

Section: Resultsmentioning

confidence: 99%

High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures

et al. 2020

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We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterialsgraphene and semiconductor nanowiresintegrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μ FE = 880/3180 cm 2 V −1 s −1 (lower/upper bound), subthreshold swing 430 mV dec −1 , and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-ofconcept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.

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Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm

Cited by 22 publications

References 35 publications

Synthesis and Applications of III–V Nanowires

Synthesis and Applications of III–V Nanowires

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures

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