Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride

Kessick, Royal; Tepper, Gary; Lee, Ed; James, R. B.

doi:10.1063/1.372193

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…͓DOI: 10.1063/1.2967726͔ Cadmium zinc telluride ͑CZT͒ ͑Cd 1−x Zn x Te, x ϳ 0.1͒ is an important semiconductor material for use as a room temperature radiation detector. [1][2][3][4] The material density ͑5.78 g / cm 3 ͒ and average atomic number ͑49.1͒ are sufficient to provide reasonably high gamma-ray stopping power. The bandgap is wide enough ͑1.6 eV͒ to suppress thermal generation of charge carriers at room temperature and under proper growth conditions the material quality can be sufficient to provide high resistivity ͑10 10 ⍀ cm͒ and low leakage currents under applied fields in the 10 3 V / cm range.…”

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Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Elshazly

Tepper

2008

Applied Physics Letters

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Carrier lifetimes and tellurium inclusion densities in detector grade cadmium zinc telluride crystals grown by the high pressure Bridgman method were optically measured using pulsed laser microwave cavity perturbation and infrared microscopy. Excess carriers were produced in the material using a pulsed laser with a wavelength of 1064 nm and pulse width of 7 ns, and the electronic decay was measured at room temperature. Spatial mapping of lifetimes and defect densities in cadmium zinc telluride was performed to determine the relationship between tellurium defect density and trapping. A strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time.

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Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Elshazly

Tepper

2008

Applied Physics Letters

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“…In addition, both frequency and Q-factor changes lead to a modified reflection, thus modeling to obtain material dependent parameters is rather involved 18,23,24 . Nevertheless, the approach yields effective µ-PCD lifetime values and it was successful in constructing sensitive electromagnetic radiation detectors 21,[25][26][27] .…”

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Ultrafast sensing of photoconductivity decay using microwave resonators

Gyüre-Garami

Blum

Sági

et al. 2019

Journal of Applied Physics

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Microwave reflectance probed photoconductivity (or µ-PCD) measurement represents a contactless and non-invasive method to characterize impurity content in semiconductors. Major drawbacks of the method include a difficult separation of reflectance due to dielectric and conduction effects and that the µ-PCD signal is prohibitively weak for highly conducting samples. Both of these limitations could be tackled with the use of microwave resonators due to the well-known sensitivity of resonator parameters to minute changes in the material properties combined with a null measurement. A general misconception is that time resolution of resonator measurements is limited beyond their bandwidth by the readout electronics response time. While it is true for conventional resonator measurements, such as those employing a frequency sweep, we present a time-resolved resonator parameter readout method which overcomes these limitations and allows measurement of complex material parameters and to enhance µ-PCD signals with the ultimate time resolution limit being the resonator time constant. This is achieved by detecting the transient response of microwave resonators on the timescale of a few 100 ns during the µ-PCD decay signal. The method employs a high-stability oscillator working with a fixed frequency which results in a stable and highly accurate measurement.

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Study of structural modification of CdZnTe bulk crystals induced by bismuth doping

Carcélen

Redondo-Cubero

Gutiérrez‐Puebla

et al. 2010

Chemical Physics Letters

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Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride

Cited by 9 publications

References 14 publications

Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Ultrafast sensing of photoconductivity decay using microwave resonators

Study of structural modification of CdZnTe bulk crystals induced by bismuth doping

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