Control of grain position in Ni-mediated crystallization of amorphous silicon

Ni behaviors in polycrystalline silicon with disk-shaped grains

“…Disk-shaped grains in partially crystallized a-Si are randomly distributed. In our previous study, we introduced the self-organization of Ni at the pressure-induced indentation sites on a-Si without selective Ni contact or patterning to control grain position in Ni-mediated crystallization of a-Si [14]. The secondary lateral growth length, defined as the length between the first and the second ring, is $20 mm.…”

ITO‐induced Columnar Polycrystalline Silicon Thin Films by CVD

“…Amorphous and polycrystalline silicon have been widely applied in thin film transistors (TFT), solar cells, and image sensors, however their high gate resistance and low photoconductivity may result in non‐uniform turn‐on and turn‐off of the devices and lead to severe long‐term reliability problems . Metal silicides have been the materials of choice for the interconnections and source/drain contacts of TFTs because of their low resistivities, but CVD of polycrystalline Si appears to offer some compelling technical and economic advantages in overcoming the limitations of the silicide process, and maintaining the known behavior of Si rather than adopting unproven materials .…”