Control of strain in GaN using an In doping-induced hardening effect

Yamaguchi, S.; Kariya, Michihiko; Kashima, Takayuki; Nitta, Shugo; Kosaki, Masayoshi; Yukawa, Y.; Amano, Hiroshi; Akasaki, Isamu

doi:10.1103/physrevb.64.035318

Cited by 31 publications

(18 citation statements)

References 16 publications

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“…As seen, it is observed that the TD density is decreased upon In co-doping in the Mg-GaN samples. It has been previously reported that In co-doping can lead to pinning of TD and annihilation of related native defects in the GaN layer thereby improving the crystalline quality [7]. Surface pit densities for the Mg-doped and In-Mg co-doped GaN layers were measured, respectively, as 5.12E09cm-2 and 4.75E09cm-2 using atomic force microscopy, which is an indication of TD reduction in the In co-doped p-GaN layer.…”

Section: Resultsmentioning

confidence: 99%

“…Mg doping can generate numerous native defects, causing severe self-compensation effects that degrade the film properties [3,4]. Isoelectronic In doping has been found to be an efficient technique to improve the optical and electrical properties of GaN based nitride epilayers and quantum structures [5][6][7][8][9]. However, there have been very few reports on the effect of In co-doping in p-type GaN layers [10,Il].…”

Section: Introductionmentioning

confidence: 99%

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Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Chung¹,

Kumar²,

Lee³

et al. 2010

J. Phys. D: Appl. Phys.

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Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Chung¹,

Kumar²,

Lee³

et al. 2010

J. Phys. D: Appl. Phys.

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“…Although our GaN is grown on GaAsf114gB and tilted by $21 , the role of In appears the same as in c-oriented GaN on sapphire(0001), that is, the strain release [5,6]. This finding suggests that the In doping technique can be applied to any GaN, regardless of substrate materials and orientations.…”

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confidence: 84%

“…A remaining question to be clarified is as to how doped In releases the strain. For GaN grown on sapphire at 950 C, Yamaguchi et al [6] proposed a model in which doped In atoms interact with screw-dislocations and terminate them, resulting in the production of the internal resistance stress. It is true that the number of imperfections in GaN on GaAs is decreased by the In doping as proved by the XRD line width.…”

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confidence: 99%

“…There have already been several reports on the In doping to GaN grown on sapphire substrates [4][5][6], where the improvement of the optical properties [4] and the controllability of strain [5,6] were demonstrated. In this study, we show that the degree of the residual strain can be controlled by In doping also in h-GaN on GaAs, and that this characteristic can contribute to the improvement of the film quality and to the control of the crystallographic relationship between h-GaN and AlAs/GaAs.…”

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confidence: 99%

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Indium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy

Funato

Shimogami

Ujita

et al. 2002

phys. stat. sol. (c)

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PACS: 68.55.Jk; 81.15.KkThe effects of indium doping on the structural properties of hexagonal GaN grown on GaAsf114gB substrates with AlAs intermediate layers are investigated. It is revealed that the In doping allows us to control the residual strain in GaN, and that the highest quality can be achieved by optimizing the In flow rate so as to minimize the strain.GaN on sapphire substrates has already achieved a remarkable success in optoelectronics [1], though there are still demands for alternative substrates to overcome the difficulty presented by the use of sapphire substrates. Among many candidates, GaAs looks quite attractive because of the conductivity and cleavability, and because the mismatch in the thermal expansion coefficients of GaN (0001) and GaAs is as small as 1.8%.In preceding studies, we investigated the growth of hexagonal (h-) GaN on GaAs(001) and f11ng (n = 1, 2, 3, 4, 8) substrates by metalorganic vapor-phase epitaxy (MOVPE) [2,3]. It was found that an AlAs intermediate layer effectively prevented the cubic phase from being included in the films, and that the highest-quality GaN was obtained on f114gB substrates with a tilt of the c-axis about 20 from the surface normal toward GaAsh111iB.In order to improve the film quality further, we try Indium doping in this study. There have already been several reports on the In doping to GaN grown on sapphire substrates [4][5][6], where the improvement of the optical properties [4] and the controllability of strain [5,6] were demonstrated. In this study, we show that the degree of the residual strain can be controlled by In doping also in h-GaN on GaAs, and that this characteristic can contribute to the improvement of the film quality and to the control of the crystallographic relationship between h-GaN and AlAs/GaAs.The samples were grown on GaAsf114gB substrates by atmospheric-pressure MOVPE, and have the structure shown schematically in Fig. 1. The role of AlAs was described above. The source precursors for AlAs were trimethylaluminum and tertiarybutylarsine, and for undoped and In-doped GaN, triethylgallium, trimethylindium (TMIn), and dimethylhydrazine. The structural properties were characterized by highresolution X-ray diffraction (XRD) using Cu Ka 1 as an X-ray source. Figure 2a shows the XRD line width estimated by the asymmetric w scan of GaN(0004) as a function of the TMIn flow rate ([TMIn]). The line width had the mini-

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Non-Monotonous Behavior of In-Doped GaN Grown by MOVPE with Nitrogen Carrier Gas

Yamamoto¹,

Tanikawa²,

Ikuta³

et al. 2001

phys. stat. sol. (b)

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This paper reports the In-doping effects in MOVPE grown GaN using a N 2 carrier gas. Electrical and optical properties of the In-doped GaN are found to show non-monotonous behavior, when the In source (TMI) supply is increased. Carrier concentration in the In-doped GaN is monotonously decreased with increasing TMI supply, while Hall mobility and PL intensity ratio between exciton emission and yellow deep emission (I EX /I YL ) are decreased in the region of low TMI supply (TMI/TEG < 0.5). In this region, tensile stress in the grown GaN estimated from the exciton emission peak energy is also increased with increasing TMI/TEG ratio. For TMI/TEG ratio in the range of 0.5-1.5, on the other hand, they show very normal behavior (improvement by In doping). Such anomalous behavior for mobility, I EX /I YL and tensile stress is discussed from the viewpoints of impurity hardening of GaN, as well as stress relaxation by both crack formation and In doping.

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Control of strain in GaN using an In doping-induced hardening effect

Cited by 31 publications

References 16 publications

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

Indium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy

Non-Monotonous Behavior of In-Doped GaN Grown by MOVPE with Nitrogen Carrier Gas

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