Control of thin ferroelectric polymer films for non-volatile memory applications

Non-volatile organic memory with sub-millimetre bending radius

“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

“…Ferroelectric-gate field effect transistors (Fe-FETs) with ferroelectric polymer layers as gate insulators have received specific attention due to their nondestructive readout capabilities, the scalable feature size of 4F 2 and their low operating voltages 31,32 . In a Fe-FET, the polarity of the programme/erase gate voltage determines the polarization state of the ferroelectric layer, which in turn controls the accumulation or depletion of carriers in the semiconducting channel between the source and drain electrode, giving rise to characteristic current hysteresis 32,33 .…”

“…Although significant progress has been made in improving certain characteristics of ferroelectric polymer memories [30][31][32][33][34][35] , only a few works have addressed mechanically flexible Fe-FETs in which characteristic ferroelectric switching has been examined under a relatively mild bending radius on the order of a few millimetres [36][37][38] . Besides ferroelectric memories, most of the previous non-volatile memories are categorized as bendable devices when their bending radii are much greater than 1 mm (Supplementary Table 1).…”

Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates

“…A promising candidate material is poly (vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) due to its transparency, non-volatility, large spontaneous polarization, excellent chemical stability, and low temperature processability. [1][2][3] Moreover, the use of easily patternable, spin-cast films of conducting polymer electrodes opens the possibility of large scale fabrication of flexible and transparent ferroelectric memory. The use of polymer electrodes presents unique challenges for the fabrication of electronic devices.…”

Thin film thermistor with positive temperature coefficient of resistance based on phase separated blends of ferroelectric and semiconducting polymers

“…[24][25][26] Batches with different ratios of VDF and TrFE were purchased from Solvay. The ferroelectric properties were characterized in capacitors.…”