Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation

Wang, Hong; Wang, Guanzhong; Bao, Pengfei; Yang, Shaolin; Zhu, Wei; Xie, Xing; Zhang, Wenjun

doi:10.1021/ja2105976

Cited by 359 publications

(351 citation statements)

References 27 publications

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“…Graphene domain size versus growth rate on Cu foil in 2009–2016 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54…”

Section: The Merits Of Ultrafast Graphene Growthmentioning

confidence: 99%

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

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The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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“…Graphene domain size versus growth rate on Cu foil in 2009–2016 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54…”

Section: The Merits Of Ultrafast Graphene Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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“…A common strategy to reduce the nucleation density is to minimize the impurity or defect density on copper surface through some relatively arduous pretreatments (for example, surface polishing and high-temperature lengthy annealing under high flow of H 2 ) of the copper substrate. For example, a longduration (3 h) annealing of copper foils at the atmospheric pressure can be used to reduce the nucleation density to achieve 1.3-mm-sized graphene domains 19 . An electrochemically polished copper foil followed by a 7-h pre-annealing step in high flow of hydrogen gas at high temperature and high pressure can be used to prepare the copper foil for the growth of single crystalline graphene domains with sizes reaching up to 2.3 mm (ref.…”

mentioning

confidence: 99%

Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

et al. 2013

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“…However, the synthesis of wafer‐scale single‐crystalline graphene has been a great challenge in chemical vapor deposition (CVD) growth due to the nucleation of numerous graphene domains on the supported substrate. To achieve growth of single‐crystalline graphene with a large area, it is essential to have very low nucleation densities, which is normally achieved by using very low carbon supply flow 2. Cu3 and Ni4 are the two types of transition metal catalysts that have been explored in most detail for graphene growth, and have shown contrasting mechanisms for graphene growth.…”

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confidence: 99%

How Low Nucleation Density of Graphene on CuNi Alloy is Achieved

Liu

Yin

et al. 2018

Advanced Science

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CuNi alloy foils are demonstrated to be one of the best substrates for synthesizing large area single‐crystalline graphene because a very fast growth rate and low nucleation density can be simultaneously achieved. The fast growth rate is understood to be due the abundance of carbon precursor supply, as a result of the high catalytic activity of Ni atoms. However, a theoretical understanding of the low nucleation density remains controversial because it is known that a high carbon precursor concentration on the surface normally leads to a high nucleation density. Here, the graphene nucleation on the CuNi alloy surfaces is systematically explored and it is revealed that: i) carbon atom dissolution into the CuNi alloy passivates the alloy surface, thereby drastically increasing the graphene nucleation barrier; ii) carbon atom diffusion on the CuNi alloy surface is greatly suppressed by the inhomogeneous atomic structure of the surface; and iii) a prominent increase in the rate of carbon diffusion into the bulk occurs when the Ni composition is higher than the percolation threshold. This study reveals the key mechanism for graphene nucleation on CuNi alloy surfaces and provides a guideline for the catalyst design for the synthesis of graphene and other 2D materials.

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Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation

Cited by 359 publications

References 27 publications

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

How Low Nucleation Density of Graphene on CuNi Alloy is Achieved

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