Controlling A-center concentration in silicon through isovalent doping: mass action analysis

Abstract

It has been determined experimentally that doping silicon with large isovalent dopants such as tin can limit the concentration of vacancy-oxygen defects, this in turn, can be deleterious for the materials properties and its application. These results have been supported by recent calculations based on density functional theory employing hybrid functional. In the present study, we employ mass action analysis to calculate the impact of germanium, tin and lead doping on the relative concentrations of vacancyoxygen defects and defect clusters in silicon under equilibrium conditions. In particular, we calculate how much isovalent doping is required to constrain vacancy-

Relative concentrations of carbon related defects in silicon

“…This is consistent to a recent model that considered the effect of isovalent doping (Ge, Sn, Pb) in Si [44]. Although carbon was not considered in that study it was demonstrated that only defects that had a strong interaction with vacancies (i.e.…”

“…C i and C i C s are the dominant carbon related defects, whereas C i O i Si I and C i O i defects become increasingly important for high temperatures and the higher initial carbon concentrations. It was previously calculated that the oversized (Pb and Sn) isovalent dopants impact the oxygen-vacancy defects [44], whereas here we showed that carbon does not. This is due to the limited formation of C i O i defects and the insignificant interaction of carbon atoms with vacancies.…”

“…4 of Ref. 44). Carbon has only a small interaction with vacancies and additionally the C i O i defect has a lower binding energy as compared to VO, therefore it is expected that carbon will have a limited impact upon the concentration of the oxygen-vacancy defects [38,42].…”

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

“…One of the first studies in this direction was reported by Brelot in 1972, [1] but there is still interest in this topic. [2][3][4][5][6] The main reason is that the isovalent tin impurity in silicon is one of the most efficient radiation-induced vacancy (V) traps. Therefore, it is suggested that Si:Sn can have a radiation hardening potential.…”