2013
DOI: 10.1088/0957-4484/24/28/285701
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Controlling tetragonality and crystalline orientation in BaTiO3nano-layers grown on Si

Abstract: A hybrid growth process was developed in order to epitaxially integrate nano-layers of the multi-functional perovskite BaTiO₃ onto Si(001) substrates. In particular, we combined molecular beam epitaxy (MBE) with radio-frequency sputtering. Due to its strong influence on the functional properties, the crystalline structure of the layers was thoroughly investigated throughout our study. MBE-grown seed layers are tetragonal and c-axis oriented up to a thickness of 20 nm. A transition into a-axis films is visible … Show more

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Cited by 47 publications
(51 citation statements)
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“…However, a multi-domain structure is usually formed during the fabrication of BaTiO 3 layers [17,18]. In the present work, we carefully investigate the influence of the multi-domain structure, as well as the waveguide rotation angle, on the EO modulation performance.…”
Section: Introductionmentioning
confidence: 99%
“…However, a multi-domain structure is usually formed during the fabrication of BaTiO 3 layers [17,18]. In the present work, we carefully investigate the influence of the multi-domain structure, as well as the waveguide rotation angle, on the EO modulation performance.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, IBM has demonstrated the integration of a ferroelectric BTO film on silicon exhibiting a strong linear EO effect with an effective Pockels coefficient of reff = 148 pm/V [47]. This value exceeds previous data reported for integrated LiNbO3 by at least a factor of five, and for strained Si by a factor of 100.…”
Section: State-of-the-art Of Bto Based Modulatorsmentioning
confidence: 67%
“…Furthermore, the resulting orientation of BTO film can vary from purely aaxis to c-axis orientations, through a mixture of a and c-axes oriented configurations [46]. Epitaxial growth of BTO films offers the possibility to select the direction in which the spontaneous polarization can appear depending on the desired application [47].…”
Section: Ferroelectricity and Domain Structurementioning
confidence: 99%
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