Conversion Efficiency Enhancement of GaN/In$_{0.11}$Ga$_{0.89}$N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process

Wang, H. W.; Chen, H. C.; Chang, Y. A.; Lin, Chien‐Chung; Han, Hao; Tsai, Ming-Tsung; Kuo, Hao‐Chung; Yu, Peichen; Lin, Shiuan Huei

doi:10.1109/lpt.2011.2160051

Cited by 15 publications

(5 citation statements)

References 19 publications

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“…Therefore, novel photon management concepts such as optical structures are needed to increase the optical length and absorption in the thin active layer . This can be achieved by roughening the p-GaN surface − or patterning the sapphire substrate . The use of metallic nanoparticles , can also help increase the external quantum efficiency of InGaN solar cells by 54% .…”

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confidence: 99%

“…15 This can be achieved by roughening the p-GaN surface 16−18 or patterning the sapphire substrate. 19 The use of metallic nanoparticles 20,21 can also help increase the external quantum efficiency of InGaN solar cells by 54%. 20 To date, surface texturing with dry-etched inverted cups shows the highest reported responsivity of 0.24 A/W for an InGaN-based PIN (ptype, intrinsic, n-type) photodetector.…”

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confidence: 99%

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Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

et al. 2017

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We demonstrate the ability to overcome the slow data transmission of a phosphor-coated white light emitting diode (LED) by replacing a conventional Si photodiode with a narrowband, green InGaN LED as receiver. By relying on the wavelength selectivity of an InGaN LED, we are able to detect the fast blue light components and reject the slow phosphor components from white light illumination, thereby increasing the modulation speed significantly from 5 MHz to 20 MHz. V-pit texturing is used to improve the peak responsivity of InGaN LEDs to 0.23 A/W at 380 nm, which is comparable with the highest values reported in InGaN detectors. Such V-pit structures also help to shield nonradiative recombination at threading dislocations, so that a high breakdown voltage of −40 V with a high bandwidth of 275 MHz can be obtained. This demonstrates the suitability of V-pit textured InGaN LEDs to function not only as a bright emitter but also as a highly responsive, fast photodetector. This dual functionality enables high-speed LED-to-LED communications, without the need for an extra photodetector.

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confidence: 99%

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confidence: 99%

Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

et al. 2017

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“…GaN nanoparticles have been deposited on substrates as solar cells [ 117 ]. The conversion efficiency is 3.10% under air mass 1.5 global illumination and room temperature conditions.…”

Section: Physical Properties and Applications Of Gan Nanoparticlesmentioning

confidence: 99%

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Lan

Wong‐Ng

et al. 2016

Micromachines

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Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.40.277778emnormale-0.21251ptnormalV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

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“…Recently, nitride−based alloys, such as AlN, GaN and InN, have achieved great success in the applications of optoelectronic devices such as light emitting diodes [1,2], lasers [3][4][5], solar cells [6][7][8], and photodetectors [9][10][11][12]. One of the key features about this nitride-based materials is the direct bandgap energy covering from 0.7 eV (for InN) to 6.2 eV (for AlN), and thus provides wide range of absorption from ultraviolet to infrared [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

InN-based heterojunction photodetector with extended infrared response

Hsu¹,

Kuo²,

Huang³

et al. 2015

Opt. Express

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The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

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Conversion Efficiency Enhancement of GaN/In$_{0.11}$Ga$_{0.89}$N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process

Cited by 15 publications

References 19 publications

Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

Textured V-Pit Green Light Emitting Diode as a Wavelength-Selective Photodetector for Fast Phosphor-Based White Light Modulation

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

InN-based heterojunction photodetector with extended infrared response

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