Conversion of conduction in p-InAs by Ar+ ion implantation

Герасименко, Н. Н.; Myasnikov, A. M.; Nesterov, A. A.; Obodnikov, V.I.; Safronov, L. N.; Khriaschev, G.S.

doi:10.1016/0168-583x(89)90830-6

Cited by 4 publications

(1 citation statement)

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“…InAs have not shown significant activation of the implanted materials despite very high doses of electrically active implants being used. 19,29 Other studies of ion implanted ntype impurities focus on damage production in these materials. 30 The attempt to measure activation via Hall effect resulted in no observation of Si activation, consistent with attempts by previous experimenters, 19 and this difficulty may explain the lack of data on activation of implants into bulk InAs and other semiconductors despite a number of studies performing n-type dopant implants into InAs.…”

Section: Previous Studies Of Electrically Active Implants Intomentioning

confidence: 99%

Activation of Si implants into InAs characterized by Raman scattering

Lind

Martin

Sorg

et al. 2016

Journal of Applied Physics

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Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si þ implants into lightly doped (001) p-type bulk InAs performed at 100 C as a function of annealing time and temperature was measured via Raman scattering. Peak shift of the L þ coupled phonon-plasmon mode after annealing at 700 C shows that active n-type doping levels %5 Â 10 19 cm À3 are possible for ion implanted Si in InAs. These values are comparable to the highest reported active carrier concentrations of 8-12 Â 10 19 cm À3 for growth-doped n-InAs. Raman scattering is shown to be a viable, non-contact technique to measure active carrier concentration in instances where contact-based methods such as Hall effect produce erroneous measurements or junction leakage prevents the measurement of shallow n þ layers, which cannot be effectively isolated from the bulk. V C 2016 AIP Publishing LLC.

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Section: Previous Studies Of Electrically Active Implants Intomentioning

confidence: 99%