Correlation between proton and heavy-ion SEUs in commercial memory devices

Abstract

Proton and heavy-ion SEU testing are performed on commercial 4 Ｍ bit-SRAMs and 64Mbit-DRAMs. Correlation between proton and heavy-ion SEUs is examined and an empirical equation has been derived between proton SEU cross-section and heavy-ion threshold-LET.

SEE sensitivities of selected advanced flash and first-in-first-out memories

“…For TI devices the formulation seems to work well (see Figure 11). Another method may be used to estimate proton induced saturation cross-sections [12]. They are shown at an arbitrarily chosen energy level of 100 MeV (see Figures 10 and 11.)…”

“…All upsets appeared to have taken place at memory cell area, since most upsets were isolated errors representing one upset bit per word. In Figure 10 the SEU cross-sections are compared to those which are model dependent estimations derived with the use of an old method (by Petersen [11]) as well as a new method (by Chiba [12]). The latter method provides the saturation cross-section only.…”