Correlation between the stress and microstructure in bias-sputtered ZrO2-Y2O3 films

Knoll, R.W.; Bradley, E.R.

doi:10.1016/0040-6090(84)90287-6

Cited by 41 publications

(11 citation statements)

References 18 publications

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“…6 depicts the stress evolution of the as-deposited membranes (closed symbols) from an almost free-stress state for the lowest deposition temperature, T s = 200°C to a compressive stress at T s = 700°C (S∼ −2 GPa) crossing a minimum at T s = 400°C (S∼ −4 GPa). These stress magnitudes are in line with the observations of Carneiro et al [22] and Knoll et al [23], who obtained compressive stress values of some GPa in sputtered YSZ films for high energetic deposition conditions (high power densities and substrate bias). However, it is difficult to compare because a wide variety of stress levels can be found in the literature depending on the deposition conditions, e.g.…”

Section: Microstructural and Mechanical Characterization Of As-deposisupporting

confidence: 92%

Electrical characterization of thermomechanically stable YSZ membranes for micro solid oxide fuel cells applications

Garbayo

Tarancón

Santiso³

et al. 2010

Solid State Ionics

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Section: Microstructural and Mechanical Characterization Of As-deposisupporting

confidence: 92%

Electrical characterization of thermomechanically stable YSZ membranes for micro solid oxide fuel cells applications

Garbayo

Tarancón

Santiso³

et al. 2010

Solid State Ionics

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“…1 are average stress measurements for a specimen deposited with a -40 V bias applied to the substrate (square data points). This preliminary experiment shows that biasing can induce significant compressive stress in beryllium, which is again consistent with a number of observations in the literature for a variety of sputtered materials [16,[19][20][21][22][23][24][25]. Note, however, that the trend towards tensile stress remains as film thickness increases.…”

Section: Stress Measurementssupporting

confidence: 78%

Residual stress measurement and microstructural characterization of thick beryllium films

Detor¹,

Wang²,

Hodge³

et al. 2008

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Beryllium films are synthesized by a magnetron sputtering technique incorporatingin-situ residual stress measurement. Monitoring the stress evolution in real time provides quantitative through-thickness information on the effects of various processing parameters, including sputtering gas pressure and substrate biasing.Specimens produced over a wide range of stress states are characterized via transmission and scanning electron microscopy, and atomic force microscopy, in order to correlate the stress data with microstructure. A columnar grain structure is observed for all specimens, and surface morphology is found to be strongly dependent on processing conditions. Analytical models of stress generation are reviewed and discussed in terms of the observed microstructure.2

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“…The film stress ~ was related to the net deflection 8 of the substrate, measured between the substrate center and a distance D from the center, by (15) Et~ The curvature due to the film stress was measured as the difference between the microstylus substrate profiles before and after film deposition.…”

Section: Resultsmentioning

confidence: 99%

“…Film stresses were determined by measuring the curvature of the substrate with a microstylus profilometer (15). Film chemical compositions were measured using energy dispersive x-ray analysis (EDX) and x-ray photoelectron spectroscopy (XPS) compared with YSZ and Ag standards.…”

Section: Methodsmentioning

confidence: 99%

Deposition, Structure, and Properties of Cermet Thin Films Composed of Ag and Y‐Stabilized Zirconia

Wang

Barnett

1992

J. Electrochem. Soc.

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Ag1-=[(Y20~)0.1(ZrO2)0.9]= (YSZ) cermet thin films have been deposited by reactive magnetron cosputtering from Ag and Zr/Y targets in Ar-O2 mixtures. The deposition conditions were such that the YSZ component in the films was fully oxidized. The film densities varied from =75% to >85% as the total pressure was decreased from 20 to 5 mTorr. Film resistivities p varied with Ag volume fraction fag from 5 • 10 -6 ~3-cm to >109 ~-cm. For fag < 0.4, p decreased rapidly with increasing fag. For fag > 0.4, p decreased more gradually with increasing fag. P in annealed films ranged from 4 • 10 -4 f~-cm for fag = 0.4 to 5 • 10 -6 ~-cm for pure Ag. Long term (>100 h) annealing at -> 700~ resulted in a gradual increase in cermet resistivity due to Ag evaporation and Ag segregation to surface islands. Both decomposition mechanisms were effectively suppressed at up to 750~ by depositing a 1 ~m thick porous perovskite cap layer on the cermet. Complex impedance spectroscopy measurements in air of cermet electrodes on YSZ electrolytes gave interfacial resistances that were a factor of =6 lower than those of pure Ag electrodes, e.g., 1.4 ~-cm 2 at 750~ Ag-YSZ cermets thus have potential as high-conductivity, low-overpotential air electrode materials for solid-oxide electrochemical devices operating at temperatures _<750~ ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-16 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-05-16 to IP

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Correlation between the stress and microstructure in bias-sputtered ZrO2-Y2O3 films

Cited by 41 publications

References 18 publications

Electrical characterization of thermomechanically stable YSZ membranes for micro solid oxide fuel cells applications

Electrical characterization of thermomechanically stable YSZ membranes for micro solid oxide fuel cells applications

Residual stress measurement and microstructural characterization of thick beryllium films

Deposition, Structure, and Properties of Cermet Thin Films Composed of Ag and Y‐Stabilized Zirconia

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