In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results.
Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin