2005
DOI: 10.1109/ted.2005.850641
|View full text |Cite
|
Sign up to set email alerts
|

Crosstalk Reduction in Mixed-Signal 3-D Integrated Circuits With Interdevice Layer Ground Planes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2005
2005
2024
2024

Publication Types

Select...
4
2
1

Relationship

2
5

Authors

Journals

citations
Cited by 17 publications
(5 citation statements)
references
References 20 publications
0
5
0
Order By: Relevance
“…Previous works have highlighted this vertical electrical interference issue between interconnects and devices [9] in different tiers with measured results, and placing conductive thin films between tiers for interference screening (Fig. 8d) has been proposed [68]. In this work, to minimally impact the 3D-IC thickness, we propose to use a layer of 2D metallic material (e.g., graphene) in ILD (as backgate or shielding layer, Fig.…”
Section: Electrical Interference and Their Screening By 2d Materialsmentioning
confidence: 99%
See 1 more Smart Citation
“…Previous works have highlighted this vertical electrical interference issue between interconnects and devices [9] in different tiers with measured results, and placing conductive thin films between tiers for interference screening (Fig. 8d) has been proposed [68]. In this work, to minimally impact the 3D-IC thickness, we propose to use a layer of 2D metallic material (e.g., graphene) in ILD (as backgate or shielding layer, Fig.…”
Section: Electrical Interference and Their Screening By 2d Materialsmentioning
confidence: 99%
“…The scattering parameter S 21 , which describes the power transferred from one tier to the other, was used to quantify coupling between adjacent tiers and simulations predict that screening effects will be negligible when screening layer thickness is reduced to 1 nm in previous studies [68]. This is because, under quasistatic approximation (the geometries are much smaller than the wavelength in the frequency range under study), although the electric field is effectively screened by the conductive layer, the magnetic field leaks through it, which causes power transmission through inductive coupling.…”
Section: B High-frequency Electric Field Screeningmentioning
confidence: 99%
“…In mixedsignal systems, noise-sensitive analog/RF circuitry is prone to failure due to interference from their digital counterpart through the base silicon substrate. Three-dimensional integration aids in the solution for noise isolation as it separates the analog/RF and digital circuits into different substrates, with the metal or the dielectric bonding layer used in wafer-bonding technology providing an effective guard ring [5]. The final footprint of the packaged system can also be smaller for a 3-D implementation.…”
Section: Introductionmentioning
confidence: 99%
“…In mixed-signal systems, Noise-sensitive analog/RF circuitry is prone to failure due to interference from their digital counterpart through the base silicon substrate. 3-D integration aids in the solution for noise isolation since it separates the analog/RF and digital circuits into different substrates with the metal or the dielectric bonding layer used in wafer-bonding technology [5] providing an effective guard ring. The final footprint of the packaged system is also less for a 3-D implementation.…”
Section: Introductionmentioning
confidence: 99%