Crystal structure, microstructure, and thermoelectric properties of GeSb6Te10 prepared by spark plasma sintering

Kosuga, Atsuko; Nakai, Kunihiro; Matsuzawa, Mie; Fujii, Yuya; Funahashi, Ryoji; Tachizawa, T.; Kubota, Yoshiki; Kifune, Kouichi

doi:10.1016/j.jallcom.2014.08.183

Cited by 20 publications

(13 citation statements)

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“…Bos et al also evaluated the crystal structure and physical properties of the Bi-Te system and determined that these properties change abruptly at 53 at% Te [4]. The structure of the Bi 4 Te 5 phase is expressed (Bi 2 ) 1 (Bi 2 Te 3 ) 5 . These results suggest that the characteristic structure of the Bi 2 Te 3 phase (that is, Te-Te layers between Te-Bi-Te-Bi-Te layers) becomes dominant at this boundary, leading to a change in the structure.…”

Section: Sb-te Systemmentioning

confidence: 99%

“…Both materials allow the recording or rewriting of data as a result of a reversible transition between crystalline and amorphous phases in response to temperature changes due to irradiation with laser light. The thermoelectric properties of these compounds have been examined so as to improve their performance [3][4][5], and research has also been performed with Ge-Bi-Te compounds obtained by the addition of Ge [6]. The properties of these materials are highly correlated with their crystal structures; therefore, the improvement of these compounds will require a good understanding of their structures, temperature characteristics and phase changes.…”

Section: Introductionmentioning

confidence: 99%

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Boundaries of the X Phases in Sb–Te and Bi–Te Binary Alloy Systems

et al. 2019

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Sb-Te and Bi-Te compounds are key components of thermoelectric or phase change recording devices. These two binary systems form commensurately/incommensurately modulated long-period layer stacking structures known as homologous phases that comprise discrete intermetallic compounds and X phases. In the latter, the homologous structures are not discrete but rather appear continuously with varying stacking periods that depend on the binary composition. However, the regions over which these X phases exist have not yet been clarified. In this study, precise synchrotron X-ray diffraction analyses of various specimens were conducted. The results demonstrate that the X phase regions are located between Sb 20 Te 3 and Sb 5 Te 6 in the Sb-Te system and between Bi 8 Te 3 and Bi 4 Te 5 in the Bi-Te system.

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Section: Sb-te Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Boundaries of the X Phases in Sb–Te and Bi–Te Binary Alloy Systems

et al. 2019

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“…For example, the ambipolarity of graphene cannot be probed by conductance measurements alone [3]. Thermoelectrics is another steadily growing field where state-of-the-art Seebeck coefficient measurements are required for both bulk and thinfilm samples [4][5][6][7][8][9][10][11][12]. In addition, Seebeck coefficient measurements under magnetic field [13] could provide a valuable experimental tool to investigate magnetothermoelectric effects, such as the Nernst effect in two-dimensional electronic systems [14,15], quantum phase transitions [16], and magnon drag effects [17], etc.…”

Section: Introductionmentioning

confidence: 99%

Experimental setup for anisotropic thermoelectric transport measurements using MPMS

Tripathi

Karppinen

2019

Meas. Sci. Technol.

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At reduced dimensions electrical transport properties of materials often depend on the measurement direction. Here we report a measurement setup designed on the manual insertion utility probe (MIUP) of the Quantum Design's magnetic property measurement system (MPMS) to measure anisotropic transport properties in the temperature range of 10-400 K and magnetic fields up to 5 Tesla. The setup is capable of measuring Seebeck coefficient and electrical resistivity both along and perpendicular to the applied magnetic field. The Seebeck measurement is based on the differential measurement technique; the four-probe electrical resistivity measurement can easily be performed on the opposite side of the setup. The setup consists of a small copper cube (5x5x5 mm 3 ) fitted with diagonally cut electrically insulated square strips. The strips are fitted with copper-constantan thermocouple in differential arrangement for the temperature-gradient (ΔT) measurement and symmetrically arranged surface mount (SM) resistors to create the ΔT across the sample. The cube can be rotated to alter the direction of applied magnetic field on the sample. We demonstrate the directional dependence of the measured transport properties for a normal platinum wire and also for single crystal flakes of CuCr2Se4.

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“…Their experimental results are in agreement with theoretical considerations. For bulk thermoelectrics, GeSbTe is a strong candidate for high-performance thermoelectric materials, because of good electrical properties, low lattice thermal conductivity (k lat ), and strong phonon scattering [15]. For thin film thermoelectrics, Lee et al (2012) [16] reported the phase impurity and thermoelectric properties of Ge 2 Sb 2 Te 5 films deposited by DC magnetron sputtering at small thickness.…”

Section: Introductionmentioning

confidence: 99%