Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

“…(Because of the six-fold symmetry of GaN, this relative orientation of the GaN and Si is also equivalent to two GaN orientations with relative azimuthal angle of 301.) This azimuthal dependence results in phiscans for asymmetric diffraction peaks that exhibit weak 12-fold symmetry, similar to that reported for MBE film growth on Si (1 0 0) [28]. The relative azimuthal alignment for nanowires grown on Si (111) is much stronger, producing essentially six-fold phiscans, as would be expected for single-crystalline, c-axis GaN.…”

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

“…However, the lattice mismatch between the AlN(0 0 0 1) and the Si(1 1 1) lattice plane amounts to 19%, leading to a high dislocation density in the AlN seed layer, which is used as the standard approach for growing c-axis-oriented GaN on silicon. The growth of c-axis-oriented GaN is also possible on substrates with a Si(0 0 1) surface, but very challenging because of difficulties with different types of surface reconstructions, and up to now, the reported overall device quality is inferior to that on Si(1 1 1) [5]. Moreover, changing the growth conditions, the GaN crystallites on Si(0 0 1) can also be aligned with their GaNð1 0 1 2Þ planes parallel to the substrate surface [6].…”

On-Wafer Seamless Integration of GaN and Si (100) Electronics

“…field effect transistors, light emitting diodes), by the low-temperature selective epitaxial growth of GaAs on a miscut Si(100) substrate [6][7][8]. With similar technology, several groups have reported the growth of GaN structures on miscut Si(100) or Si(110) substrates by molecular beam epitaxy (MBE) [9] and metalorganic vapor phase epitaxy (MOVPE) [10]. However, this approach is challenging because of the difficulty of growing high quality wurtzite GaN on (100)-oriented cubic Si substrates [10].…”

“…With similar technology, several groups have reported the growth of GaN structures on miscut Si(100) or Si(110) substrates by molecular beam epitaxy (MBE) [9] and metalorganic vapor phase epitaxy (MOVPE) [10]. However, this approach is challenging because of the difficulty of growing high quality wurtzite GaN on (100)-oriented cubic Si substrates [10]. Moreover, the use of miscut substrates increases the density of surface states in the Si material, degrading the performance of Si electronics designed therein.…”