Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behavior

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

“…Since then, the other metals such as Ni, Pt, Ag, Cu, and so forth have also been used as catalysts to assist the growth of III-nitride. [58][59][60][61] Although the catalyst can promote the growth of NWs, the difference in the crystal structure between the foreign metal, substrate, and the as-grown InGaN NWs inevitably induces stacking faults and deep trapping states. The defects would become the trapping center, thus leading to photo-generated charge carriers recombination and ultimately reducing PEC performance.…”

One-dimensional III-nitrides: towards ultrahigh efficiency, ultrahigh stability artificial photosynthesis

“…2a). III-Nitride nanowires, grown by the metal–organic chemical vapor deposition (MOCVD) method, have been successfully fabricated with various catalysts such as Au, 28–30 Ni, 31–33 AuNi alloy, 34,35 Fe, 36 and Cu 37 on different substrates, including sapphire, silicon, GaAs, and GaP. 38 Although the foreign metal catalysts promote the growth of 1D nanostructures, stacking faults and deep trapping states are unavoidable due to the difference in the crystal structure between the metals and III-nitrides.…”