Cu2ZnSn(S,Se)4 kesterite solar cell with 5.1% efficiency using spray pyrolysis of aqueous precursor solution followed by selenization

Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

“…These two peaks represent the CZTSSe phase. These results are in good agreement with results reported earlier [35,42,43]. It is observed that the position of (112) peak slightly shifts towards lower diffraction angle with increase in the selenization time ( Fig.…”

“…7). Raman peaks corresponding to Se anion were observed at 204e216 cm À1 and corresponding to S anion were observed at 326e330 cm À1 in CZTSSe thin films [3,43,44]. The shift in the main characteristic Raman peak is due to the incorporation of Se, which changes the bonding between atoms because of differences in the size.…”

Effect of calcination temperature on the properties of CZTS absorber layer prepared by RF sputtering for solar cell applications

“…The chemical methods include several techniques, such as chemical spray pyrolysis [8], photochemical depositions [9], sol-gel technique [10], spin coating [11], electrodeposition [12], electro-spinning [13], and successive ionic layer adsorption and reaction (SILAR) [14], etc. The physical or vacuum-based method includes atom beam sputtering [15], e-beam and thermal evaporation [16], pulsed laser deposition [17], etc.…”

Synthesis and properties of Cu2(FexZn1−x)SnS4 nanocrystals by microwave irradiation assisted solvothermal method

“…In contrast, non-vacuum based approaches can provide low-cost routes to Cu 2 ZnSnS 4 solar cells. These non-vacuum based approaches include spray pyrolysis [4], electrodeposition [5], sol-gel method [6], hydrazine-based processing [7], nanocrystals-based approach [8], etc. Among these non-vacuum methods, Wang et al [7] fabricated Cu 2 ZnSn(S,Se) 4 thin film solar cells with 12.6% by hydrazinebased processing.…”