CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades

Abstract

We have fabricated a series of GaxIn1−xP samples over the compositional range 0.51<x<0.76 on GaAs substrates. The samples were prepared by first growing a thick step-graded layer of GaAs1−yPy to bridge the lattice misfit between the GaxIn1−xP layers and the GaAs substrate. The order parameter was tuned using a dilute antimony surfactant during growth. The composition, strain, and order parameter of each sample were characterized by x-ray diffraction, and the bandgap was measured by photoluminescence. We find good agreement between the experimentally measured bandgaps and theoretically modeled curves.

Design of a GaInP/GaAs tandem solar cell for maximum daily, monthly, and yearly energy output

“…Determining a reasonable variation of Ga (x )In (1−x )P bandgap, E g , with Ga composition, x, is problematic as E g is very sensitive to crystal ordering, 20 which is determined by the processing conditions such as growth rate and temperature: 21 GaInP grown with the same Ga composition but under different conditions may vary in bandgap by nearly 100 MeV. Alibert et al 22 developed expressions for the direct and indirect bandgaps of GaInP versus Ga composition based upon electroreflectance measurements; however, the direct gap predicted by these expressions is nearly 50 MeV greater than what is used in modern GaInP-based solar cells.…”

Elemental and magnetic sensitive imaging using x-ray excited luminescence microscopy

“…To grow it on a conventional substrate such as GaAs, the use of an intermediate step-graded buffer layer of GaAs x P 1-x is required. [10][11][12] Thus, knowledge of the luminescence efficiency and defect structure is critical for advancing devices based on these materials. Figure 3 were incident at an angle of 45 • .…”

Экспериментальные исследования влияния эффектов атомного упорядочения в эпитаксиальных твердых растворах Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-P на их оптические свойства

“…Определенное нами экспериментально уменьшение энергии запрещен-ной зоны в упорядоченном твердом растворе GaInP при заданном уровне дисторсии и факторе порядка хорошо согласуется с данными теоретических иссле-дований [2,34] и экспериментальными результатами работ [11,35,36]. Уменьшение температуры эпитаксии с 700 до 600…”