Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide Structure

Abstract

This study is part of a project that is aimed at building dynamic boundary conditions near a solid wall, in order to reduce the large eddy simulation spatial resolution that is necessary in this region. The objective is to build a low-order dynamical system in a plane parallel to the wall, which will mimic the unsteady behaviour of turbulence. This dynamical system should be derived from a POD decomposition of the velocity field. The POD decomposition is to be applied on an experimental database of time-resolved velocity fields. In order to obtain the experimental database, a specific experiment of high-speed stereoscopic particle image velocimetry (PIV) has been performed. This experiment was carried out in the turbulent boundary layer of the LML wind tunnel. The plane under study was parallel to the wall located at 100 wall units. This database is validated via comparison with hot-wire anemometry (HWA). Despite some peak locking observed on the streamwise velocity component, the PDF and the power spectra are in very good agreement with the HWA results. The two-point spatial correlations are also in good agreement with the results from the literature. As the flow is time-resolved, space-time correlations are also computed. The convection of the flow structure is observed to be the most important effect at this wall distance. The next step is to compute the dynamical system and to couple it to a large eddy simulation.

Growth rates of dry thermal oxidation of 4H-silicon carbide

“…Additionally, the results in the Fig. 6 suggest that the difference of the linear growth rate coefficient between the a-and the m-face is negligible for low temperature regime, which is in agreement with Tokura et al 19 Fig . 7 shows that the growth rate enhancement parameter for thin oxides for all four crystallographic faces is temperature-dependent.…”

“…On the other hand, the two other orientations, C-and a-face, show conclusive results that are in line with the findings of Goto et al 3 For m-oriented SiC, there are no comparisons possible yet, as these are the first proposed parameters for dry thermal oxidation of 4H-SiC m-face. Overall, the growth rates obtained in this study show excellent results in process simulations with SILVACO's Victory Process 32 with respect to the experimental findings 19,38 (see follow-up results 44 ). Table I provides an overview of the obtained activation energies and the pre-exponential factors of Arrhenius plots for all the four inspected crystallographic faces.…”

“…3,13,14 It is well known that the oxidation of SiC is a face-terminated oxidation. [15][16][17][18] Particularly important is the dependence of the oxidation rates on the crystal orientation, which has significant consequences for non-planar device structures, for instance, the trench design of a U-groove metal-oxide-semiconductor field-effect transistor, 19 where the oxide is located on all crystallographic faces. 2 In this case, the oxide growth thicknesses will vary in the dependence of the particular face, requiring advanced high-accuracy multidimensional modeling to correctly predict the oxide formation of the overall device.…”

Status of vertical SiC MOSFET

“…The growth speed of the oxide film is faster on the (0001 _ )C surface than on the (0001)Si surface. Tokura and colleagues examined in detail the anisotropy of the thermal oxidation of 6H-SiC [17]. They concluded that the anisotropy of the oxidation rate is due to the generation of the interface oxide Si 4 C 4-x O 2 , and the oxidization rate on the Si surface is lowered by the interface oxide, which prevents oxidation.…”

Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

“…The MOS channel in UMOSFETs is formed on trench sidewalls created by RIE. Though the MOS channel properties greatly affect the total UMOSFET performance [3,4], there are few reports related to the MOSFET performance formed on the trench sidewalls. In addition to that, the different surface orientation appears at the trench sidewalls.…”