Abstract:Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μ… Show more
“…7b . The observed patterns differ completely from that of m-HfO 2 , possibly because of the breakage of crystal symmetry by point defects or edges in c-HfO 2 3 , 32 . Figure 7 ( a ) XRD patterns, and ( b ) Raman spectra of c-HfO 2 nanostructures; ( c ) UV-vis absorption spectrum with inset depicting Tauc plots for band gaps; ( d ) thermogravimetric analysis (TGA) curves for c-HfO 2 nanostructures.…”
The development of a strategy to stabilise the cubic phase of HfO2 at lower temperatures is necessary for the emergence of unique properties that are not realised in the thermodynamically stable monoclinic phase. A very high temperature (>2600 °C) is required to produce the cubic phase of HfO2, whereas the monoclinic phase is stable at low temperature. Here, a novel rapid synthesis strategy was designed to develop highly crystalline, pure cubic-phase HfO2 nanoparticles (size <10 nm) using microwave irradiation. Furthermore, the as-prepared nanoparticles were converted to different morphologies (spherical nanoparticles and nanoplates) without compromising the cubic phase by employing a post-hydrothermal treatment in the presence of surface modifiers. The cytotoxicities and proliferative profiles of the synthesised cubic HfO2 nanostructures were investigated over the MCF-7 breast cancer cell line, along with caspase-3/7 activities. The low-temperature phase stabilisation was significantly attributed to surface imperfections (defects and deformations) induced in the crystal lattice by the desirable presence of Na2S·xH2O and NaOH. Our work provides unprecedented insight into the stabilisation of nanoscale cubic-phase HfO2 in ambient environments; the method could be extended to other challenging phases of nanomaterials.
“…7b . The observed patterns differ completely from that of m-HfO 2 , possibly because of the breakage of crystal symmetry by point defects or edges in c-HfO 2 3 , 32 . Figure 7 ( a ) XRD patterns, and ( b ) Raman spectra of c-HfO 2 nanostructures; ( c ) UV-vis absorption spectrum with inset depicting Tauc plots for band gaps; ( d ) thermogravimetric analysis (TGA) curves for c-HfO 2 nanostructures.…”
The development of a strategy to stabilise the cubic phase of HfO2 at lower temperatures is necessary for the emergence of unique properties that are not realised in the thermodynamically stable monoclinic phase. A very high temperature (>2600 °C) is required to produce the cubic phase of HfO2, whereas the monoclinic phase is stable at low temperature. Here, a novel rapid synthesis strategy was designed to develop highly crystalline, pure cubic-phase HfO2 nanoparticles (size <10 nm) using microwave irradiation. Furthermore, the as-prepared nanoparticles were converted to different morphologies (spherical nanoparticles and nanoplates) without compromising the cubic phase by employing a post-hydrothermal treatment in the presence of surface modifiers. The cytotoxicities and proliferative profiles of the synthesised cubic HfO2 nanostructures were investigated over the MCF-7 breast cancer cell line, along with caspase-3/7 activities. The low-temperature phase stabilisation was significantly attributed to surface imperfections (defects and deformations) induced in the crystal lattice by the desirable presence of Na2S·xH2O and NaOH. Our work provides unprecedented insight into the stabilisation of nanoscale cubic-phase HfO2 in ambient environments; the method could be extended to other challenging phases of nanomaterials.
“…6b) without affecting the SLG opto-electric performance and avoiding defect formation and/or chemical interactions is another challenge. Plasma assisted dielectric deposition technologies tend to induce defects in SLG [274,275]. The atomic layer deposition (ALD) of high-k dielectrics has been studied [276].…”
Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...
“…The D peak intensity remained constant even after the iCVD copolymer film was deposited on the graphene. This revealed that, unlike other deposition processes, the copolymer deposition process did not generate additional defects in the graphene. Figure b,c shows the 2D and G peaks, as well as the 2D/G and G peak changes of the graphene depending on the VIDZ concentration in the copolymer dielectrics, respectively.…”
A high-performance top-gated graphene field-effect transistor (FET) with excellent mechanical flexibility is demonstrated by implementing a surface-energy-engineered copolymer gate dielectric via a solvent-free process called initiated chemical vapor deposition. The ultrathin, flexible copolymer dielectric is synthesized from two monomers composed of 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane and 1-vinylimidazole (VIDZ). The copolymer dielectric enables the graphene device to exhibit excellent dielectric performance and substantially enhanced mechanical flexibility. The p-doping level of the graphene can be tuned by varying the polar VIDZ fraction in the copolymer dielectric, and the Dirac voltage (V ) of the graphene FET can thus be systematically controlled. In particular, the V approaches neutrality with higher VIDZ concentrations in the copolymer dielectric, which minimizes the carrier scattering and thereby improves the charge transport of the graphene device. As a result, the graphene FET with 20 nm thick copolymer dielectrics exhibits field-effect hole and electron mobility values of over 7200 and 3800 cm V s , respectively, at room temperature. These electrical characteristics remain unchanged even at the 1 mm bending radius, corresponding to a tensile strain of 1.28%. The formed gate stack with the copolymer gate dielectric is further investigated for high-frequency flexible device applications.
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