Data Retention Characteristics for Gate Oxide Schemes in Sub-50 nm Saddle-Fin Transistor Dynamic-Random-Access-Memory Technology

Ryu, Seong-Wan; Yoo, Min-Soo; Choi, Deuk-Sung; Cha, Seon-Yong; Jeong, Jae-Goan

doi:10.7567/jjap.50.04dd01

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2015

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the GIDL current is proportionally dependent on the electric field intensity owing to the base on the band-to-band tunneling (BTBT) mechanism, it is possible to suppress the GIDL currents with a reduced electric field through the high-κ dielectrics. [17][18][19] The control of GIDL has an advantage at low standby power, 20) thus many research works have focused on the suppression of GIDL currents on diverse MOSFET structures like silicon on insulator, double gate, bulk, and nanowire. [21][22][23][24][25][26][27] In Sect.…”

Section: Introductionmentioning

confidence: 99%

Gate induced drain leakage reduction with analysis of gate fringing field effect on high-κ/metal gate CMOS technology

Jang

Shin

Jung

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We suggest the optimum permittivity for a high-κ/metal gate (HKMG) CMOS structure based on the trade-off characteristics between the fringing field induced barrier lowering (FIBL) and gate induced drain leakage (GIDL). By adopting the high-κ gate dielectric, the GIDL from the band-to-band tunneling at the interface of gate and lightly doped drain (LDD) is suppressed with wide tunneling width owing to the enhanced fringing field, while the FIBL effects is degenerated as the previous reports. These two effects from the gate fringing field are studied extensively to manage the leakage current of HKMG for low power applications.

show abstract