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In this paper, the dependence of negative bias temperature instability (NBTI) and low-frequency noise characteristics on the various nitrided gate oxides is reported. The threshold voltage shift (ÁV T ) under NBTI stress for thermally nitrided oxide (TNO) was greater than that of plasma nitrided oxide (PNO), whereas the slopes of ÁV T versus stress time for PNO were similar to those for TNO. The flicker noise (1=f noise) characteristic of PNO was better than that of TNO by about 1 order of magnitude, although the 1=f noise of PNO showed almost the same dependence on the frequency as that of TNO. The carrier number fluctuation model due to the trapping and detrapping of electrons in oxide traps was found to be a dominant mechanism of flicker noise. The probability of the generation of drain current random telegraph signal (I D -RTS) noise shows similar values (70-78%) for all nitrided oxides, which shows that the generation of RTS noise is not greatly affected by the nitridation method or nitrogen concentration. #

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A data retention time has been investigated for various gate oxide schemes of saddle-fin (S-Fin) transistor dynamic random access memory (DRAM). The interface traps strongly affected the data retention time which was not clearly explained with a gate-induced-drain-leakage (GIDL) current as well as a junction leakage current. Despite the lower GIDL current by the thicker side-wall oxide of a dry oxidation scheme than a radical scheme, the degradation of the retention time was originated from the high interface-trap density (D it ). It is worthwhile to note that the D it as well as the GIDL current is a still meaning parameter to analyze the data retention time. #