Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

“…13 The model is expressed as coupled rate equations, one for each facet, and takes into account the interplay between the precursor decomposition rate, adatom diffusion, and incorporation, all of which are facet-dependent processes. By comparing with systematic experiments, this model produces quantitative agreement with the observed morphological evolution of the surfaces and the compositional dependence on position for both transient and stationary growth regimes as a function of temperature.…”

Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates

“…Our results establish a new paradigm for the future development of seeded nanostructures based on the judicious combination of experimental measurements and theoretical modelling, which could play a pivotal role when a particular design is needed for specific requirements. A systematic analysis of the samples from batch II reveals that increasing T G enhances the capillarity [23] from the sidewalls to the bottom, which increases the growth rate on the base and, therefore, broadens the basal profile.…”

Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

“…where D i is the diffusion constant, F i the effective atom flux, 10 and s i the adatom lifetime to incorporation. D i and s i have Arrhenius forms:…”