Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane

Abstract

Deep levels in 3C-SiC on Si grown by chemical vapor deposition using hexamethyldisilane (HMDS) were investigated by the deep level transient spectroscopy (DLTS). 3C-SiC epilayers with various thicknesses were grown by changing the growth time. Relatively thin epilayers (<1 µm) showed DLTS signals in a wide temperature range. This indicates that these epilayers have defects distributed in a wide energy range. These defects seem to originate from the 3C-SiC/Si heterointerface. On the other hand, relatively thick epilayers (>2.2 µm) showed only one DLTS peak, which corresponds to a defect having an activation energy of about 0.25 eV. This defect is a donor defect and is identical with a defect observed in 3C-SiC grown from SiH4 + C3H8.

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

“…Meanwhile, methylsilane, trimethylsilane, and hexamehyldisilane have both Si and C atoms. Therefore, methylsilane [ [3] , [4] , [5] , [6] , [7] , [8] , [9] , [10] , [11] , [12] , [13] , [14] , [15] ], trimethylsilane [ 16 ], and hexamethyldisilane [ [17] , [18] , [19] , [20] , [21] , [22] , [23] , [24] , [25] , [26] , [27] , [28] , [29] ] have been employed in the SiC film formation experiments with various deposition methods such as thermal CVD and plasma-enhanced CVD.…”

Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2

“…One way to go is to choose precursors with direct Si–C bonds. Hence, hexamethyldisilane (HMDS) has been used in H 2 at atmospheric pressure and low pressure also in an H 2 ambient . Another way to enhance the safety of the growth process is to reduce the use of H 2, even though the detailed understanding of the growth process is still lacking.…”

“…Table summarized the investigations on CVD growth of SiC films from HMDS. H 2 almost presented in all CVD depositions, such as Atmospheric Pressure CVD (APCVD), Low Pressure CVD (LPCVD), Metal‐Organic CVD (MOCVD) Plasma Enhanced CVD (PECVD) and Laser CVD (LCVD) . In the case of deposition rate ( R dep ), only several μm/h or less was reported.…”

Thermal stability of deep levels between room temperature and 1500 °C in as-grown 3C-SiC

“…Throughout the years, few investigations by capacitance transient methods on deep levels of as-grown 3C-SiC have been performed, [4][5][6][7][8][9] the most recent of which dates back to 2003 and since the 3C-SiC epitaxial growth is a continuously evolving field of study, new reports on the characterization of electrically active levels are strongly needed. Furthermore, the analysis of the thermal behavior and nature of deep levels can provide additional ground for epitaxial growth scientists so to better understand growth mechanisms and tune the parameters involved in the 3C-SiC growth process.…”